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	SP4T RF MEMS switch with low actuation voltage
	Hu Guang-wei ; Liu Ze-iven ; Hou Zhi-hao ; Li Zhi-jian
	2010-05-07 ; 2010-05-07
关键词	Practical/ coplanar waveguide components microswitches microwave switches oxygen compounds silicon compounds/ SP4T RF MEMS switch low actuation voltage electrostatic actuated single-pole multithrow contact switch low initial stress coplanar waveguide impedance match insertion loss low frequency band resistance 50 ohm voltage 18.8 V frequency 3 GHz SiON/ B2180B Relays and switches B2575 MEMS and NEMS device technology B1320 Waveguide and microwave transmission line components/ resistance 5.0E+01 ohm voltage 1.88E+01 V frequency 3.0E+09 Hz/ SiON/int Si/int N/int O/int SiON/ss Si/ss N/ss O/ss
中文摘要	An electrostatic actuated SP4T (single-pole multi-throw) contact RF MEMS switch with low voltage is designed and fabricated. SiON (silicon oxynitride) with low initial stress is used as the functional material of the fixed-fixed bridge of the unit switch, and gold as the contact metal. The whole SP4T switch consists of coplanar waveguide which meets 50 Omega characteristic impedance match, an input port, four output ports, four static actuated bridges, and four control pads. Measurements show the actuation voltage is 18. 8 V, insertion loss S21<0. 26dB@DC-3 GHz, S3K0. 46 dB@DC-3 GHz, isolation S21> 69. 5 dB@DC-3 GHz, S31>69. 2 dB@DC-3 GHz. The results indicate that four output ports present very similar isolation, and their insertion loss are enough small at low frequency band.
语种	中文 ; 中文
出版者	Southeast University ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16419]
专题	清华大学
推荐引用方式 GB/T 7714	Hu Guang-wei,Liu Ze-iven,Hou Zhi-hao,et al. SP4T RF MEMS switch with low actuation voltage[J],2010, 2010.
APA	Hu Guang-wei,Liu Ze-iven,Hou Zhi-hao,&Li Zhi-jian.(2010).SP4T RF MEMS switch with low actuation voltage..
MLA	Hu Guang-wei,et al."SP4T RF MEMS switch with low actuation voltage".(2010).

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