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	New type of SiO/sub 2/ gate insulator a-Si TFT uncooled infrared detector
	Liu Xing-ming ; Han Lin ; Liu Li-tian
	2010-05-07 ; 2010-05-07
关键词	Theoretical or Mathematical Experimental/ amorphous semiconductors infrared detectors silicon compounds thin film transistors/ TFT uncooled infrared detector SiO/sub 2/ gate insulator amorphous silicon thin film transistor uncooled infrared detector IR detector temperature stability gate insulator deposition uniformity Si-SiO/sub 2// B7230C Photodetectors B2560R Insulated gate field effect transistors/ Si-SiO2/int SiO2/int O2/int Si/int O/int SiO2/bin O2/bin Si/bin O/bin Si/el
中文摘要	The amorphous silicon (a-Si) thin film transistor (TFT) is studied and used as uncooled infrared (IR) detector. A new type of SiO/sub 2 / gate insulator a-Si TFT uncooled infrared detector is presented. The basic mechanism of SiO/sub 2/ gate insulator a -Si TFT uncooled infrared detector is similar to that of conventional SiN/sub x/ gate insulator a-Si TFT. The detector has high responsivity and temperature stability in performance. It also has the advantage of preferable technique repetition and gate insulator deposition uniformity.
语种	中文 ; 中文
出版者	Editorial Board J. Infrared and Laser Engineering ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16411]
专题	清华大学
推荐引用方式 GB/T 7714	Liu Xing-ming,Han Lin,Liu Li-tian. New type of SiO/sub 2/ gate insulator a-Si TFT uncooled infrared detector[J],2010, 2010.
APA	Liu Xing-ming,Han Lin,&Liu Li-tian.(2010).New type of SiO/sub 2/ gate insulator a-Si TFT uncooled infrared detector..
MLA	Liu Xing-ming,et al."New type of SiO/sub 2/ gate insulator a-Si TFT uncooled infrared detector".(2010).

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