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	Residual strain around a step edge of artificial Al/Si(111)-7x7 nanocluster
	Liu, ZW ; Xie, HM ; Fang, DN ; Dai, FL ; Xue, QK ; Liu, H ; Jia, JF
	2010-05-07 ; 2010-05-07
关键词	SURFACES DISPLACEMENT SI(111)-7X7 MICROSCOPY ENERGIES SILICON SI(001) ARRAYS Physics, Applied
中文摘要	During artificial Al/Si(111)-7x7 nanocluster fabrication by using surface-mediated clustering, original step with an atomically straight edge becomes curved and irregular because of stronger attractive interaction between Al atoms and Si atoms. Surface residual strain around step edges has been studied by using digital geometric phase technique. The results show that the residual strain is compressive and there is larger compressive stress near both of the up and down step edges. (C) 2005 American Institute of Physics.
语种	英语 ; 英语
出版者	AMER INST PHYSICS ; MELVILLE ; CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16065]
专题	清华大学
推荐引用方式 GB/T 7714	Liu, ZW,Xie, HM,Fang, DN,et al. Residual strain around a step edge of artificial Al/Si(111)-7x7 nanocluster[J],2010, 2010.
APA	Liu, ZW.,Xie, HM.,Fang, DN.,Dai, FL.,Xue, QK.,...&Jia, JF.(2010).Residual strain around a step edge of artificial Al/Si(111)-7x7 nanocluster..
MLA	Liu, ZW,et al."Residual strain around a step edge of artificial Al/Si(111)-7x7 nanocluster".(2010).

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