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	Defect nucleation in SOI wafers due to hydrogen ion implantation
	Xu, M ; Feng, XQ
	2010-05-07 ; 2010-05-07
关键词	hydrogen ion implantation silicon-on-insulator smart-cut technology defect nucleation nanomechanics fracture SILICON-ON-INSULATOR SMART-CUT(R) PROCESS MATERIAL TECHNOLOGY SUBSTRATE EXFOLIATION Engineering, Mechanical Mechanics
中文摘要	Hydrogen ion implantation in the Smart-Cut production process leads to fracture of Si-Si bonds, formation of microcavities and splitting of a single-crystal silicon wafer. In the present paper, an analysis model for defect nucleation induced by hydrogen ion implantation is established based on the continuum mechanics theory accounting for the crystal structure of silicon. Using this model and probability theory, an analytical expression is derived to calculate the defect density as a function of the hydrogen ion implantation dose and the temperature. (C) 2004 Elsevier Ltd. All rights reserved.
语种	英语 ; 英语
出版者	ELSEVIER SCIENCE BV ; AMSTERDAM ; PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/15724]
专题	清华大学
推荐引用方式 GB/T 7714	Xu, M,Feng, XQ. Defect nucleation in SOI wafers due to hydrogen ion implantation[J],2010, 2010.
APA	Xu, M,&Feng, XQ.(2010).Defect nucleation in SOI wafers due to hydrogen ion implantation..
MLA	Xu, M,et al."Defect nucleation in SOI wafers due to hydrogen ion implantation".(2010).

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