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	Thickness-dependent rectifying behavior in heterojunctions of TbMnO3/Nb-1.0 wt.%-doped SrTiO3
	Cui, Yimin ; Zhang, Liuwan ; Wang, Rongming ; Xie, Guanlin
	2010-05-06 ; 2010-05-06
关键词	thickness-dependent heterojunction rectifying properties electrical properties and measurements rare-earth manganite P-N-JUNCTIONS THIN-FILMS TBMNO3 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter
中文摘要	We have fabricated different heterojunctions by pulsed laser depositing different thickness films of TbMnO3(TMO) on single crystal Nb-1.0 wt.%-doped SrTiO3 substrates. In addition to all those heterojunctions showing good rectifying properties, the most interesting phenomena are thickness-dependent backward diodelike behavior at low temperatures. Especially, when TMO film thickness is 40 run, the normal diodelike behavior are found in a wide temperature range from 25 to 350 K, and the rectifying behaviors are nearly independent of temperature below 300 K. When TMO film thickness is 60 run, the backward rectifying behaviors are nearly independent of temperature below 200 K. This work implies that various rectifying properties can be gotten in the same manganite based diodes by controlled different parameters. (c) 2007 Elsevier B.V. All rights reserved.
语种	英语 ; 英语
出版者	ELSEVIER SCIENCE SA ; LAUSANNE ; PO BOX 564, 1001 LAUSANNE, SWITZERLAND
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/15573]
专题	清华大学
推荐引用方式 GB/T 7714	Cui, Yimin,Zhang, Liuwan,Wang, Rongming,et al. Thickness-dependent rectifying behavior in heterojunctions of TbMnO3/Nb-1.0 wt.%-doped SrTiO3[J],2010, 2010.
APA	Cui, Yimin,Zhang, Liuwan,Wang, Rongming,&Xie, Guanlin.(2010).Thickness-dependent rectifying behavior in heterojunctions of TbMnO3/Nb-1.0 wt.%-doped SrTiO3..
MLA	Cui, Yimin,et al."Thickness-dependent rectifying behavior in heterojunctions of TbMnO3/Nb-1.0 wt.%-doped SrTiO3".(2010).

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