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	Surface modification of MgAl2O4 (111) for growth of high-quality ZnO epitaxial films
	Zeng, Z. Q. ; Liu, Y. Z. ; Yuan, H. T. ; Mei, Z. X. ; Du, X. L. ; Jia, J. F. ; Xue, Q. K. ; Zhang, Z.
	2010-05-06 ; 2010-05-06
关键词	MOLECULAR-BEAM EPITAXY SAPPHIRE SUBSTRATE LAYER Physics, Applied
中文摘要	A magnesium wetting layer was used to modify the surface structure of MgAl2O4 (111) substrate to achieve growth of high-quality ZnO film by radio frequency plasma-assisted molecular beam epitaxy. It is found that this magnesium layer plays a crucial role in 30 degrees rotation domain elimination, defect density reduction, and polarity control of ZnO film, as demonstrated by in situ reflection high-energy electron diffraction and ex situ transmission electron microscopy. Atomic force microscopy observation shows smooth ZnO surfaces with clearly resolved atomic steps of the films. (c) 2007 American Institute of Physics.
语种	英语 ; 英语
出版者	AMER INST PHYSICS ; MELVILLE ; CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/14572]
专题	清华大学
推荐引用方式 GB/T 7714	Zeng, Z. Q.,Liu, Y. Z.,Yuan, H. T.,et al. Surface modification of MgAl2O4 (111) for growth of high-quality ZnO epitaxial films[J],2010, 2010.
APA	Zeng, Z. Q..,Liu, Y. Z..,Yuan, H. T..,Mei, Z. X..,Du, X. L..,...&Zhang, Z..(2010).Surface modification of MgAl2O4 (111) for growth of high-quality ZnO epitaxial films..
MLA	Zeng, Z. Q.,et al."Surface modification of MgAl2O4 (111) for growth of high-quality ZnO epitaxial films".(2010).

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