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Monte Carlo simulation of ferroelectric domain growth
Li, BL ; Liu, XP ; Fang, F ; Zhu, JL ; Liu, JM
2010-05-06 ; 2010-05-06
关键词PHASE-ORDERING KINETICS COMPUTER-SIMULATION GRAIN-GROWTH LOW-TEMPERATURES 2 DIMENSIONS ISING-MODEL SYSTEMS FIELD SEPARATION DYNAMICS Physics, Condensed Matter
中文摘要The kinetics of two-dimensional isothermal domain growth in a quenched ferroelectric system is investigated using Monte Carlo simulation based on a realistic Ginzburg-Landau ferroelectric model with cubic-tetragonal (square-rectangle) phase transitions. The evolution of the domain pattern and domain size with annealing time is simulated, and the stability of trijunctions and tetrajunctions of domain walls is analyzed. It is found that in this much realistic model with strong dipole alignment anisotropy and long-range Coulomb interaction, the powerlaw for normal domain growth still stands applicable. Towards the late stage of domain growth, both the average domain area and reciprocal density of domain wall junctions increase linearly with time, and the one-parameter dynamic scaling of the domain growth is demonstrated.
语种英语 ; 英语
出版者AMERICAN PHYSICAL SOC ; COLLEGE PK ; ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
内容类型期刊论文
源URL[http://hdl.handle.net/123456789/14570]  
专题清华大学
推荐引用方式
GB/T 7714
Li, BL,Liu, XP,Fang, F,et al. Monte Carlo simulation of ferroelectric domain growth[J],2010, 2010.
APA Li, BL,Liu, XP,Fang, F,Zhu, JL,&Liu, JM.(2010).Monte Carlo simulation of ferroelectric domain growth..
MLA Li, BL,et al."Monte Carlo simulation of ferroelectric domain growth".(2010).
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