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	Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors
	Qi, Xiao-Liang ; Wu, Yong-Shi ; Zhang, Shou-Cheng
	2010-05-06 ; 2010-05-06
关键词	LANDAU-LEVELS EDGE STATES CONDUCTANCE MODEL Physics, Condensed Matter
中文摘要	We propose models of two-dimensional paramagnetic semiconductors where the intrinsic spin Hall effect is exactly quantized in integer units of a topological charge. The model describes a topological insulator in the bulk and a "holographic metal" at the edge, where the number of extended edge states crossing the Fermi level is dictated by (exactly equal to) the bulk topological charge. We also demonstrate the spin Hall effect explicitly in terms of the spin accumulation caused by the adiabatic flux insertion.
语种	英语 ; 英语
出版者	AMERICAN PHYSICAL SOC ; COLLEGE PK ; ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/14542]
专题	清华大学
推荐引用方式 GB/T 7714	Qi, Xiao-Liang,Wu, Yong-Shi,Zhang, Shou-Cheng. Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors[J],2010, 2010.
APA	Qi, Xiao-Liang,Wu, Yong-Shi,&Zhang, Shou-Cheng.(2010).Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors..
MLA	Qi, Xiao-Liang,et al."Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors".(2010).

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