QQ客服 官方微博 反馈留言

	Transient response of bipolar junction transistor under intense electromagnetic pulse
	Zhou Huai-an ; Du Zheng-wei ; Gong Ke
	2010-05-06 ; 2010-05-06
关键词	Practical Theoretical or Mathematical/ bipolar transistors electromagnetic pulse finite difference time-domain analysis semiconductor device breakdown transient response/ transistor transient response bipolar junction transistor intense electromagnetic pulse finite-difference time-domain method BJT electronic field current density transistor temperature device burnout hot spot formation pulse magnitude collector breakdown tunnel base-emitter voltage transistor breakdown emitter-collector breakdown base-emitter breakdown burnout temperature two-dimensional numerical simulation 55 to 100 V/ B2560J Bipolar transistors B5230 Electromagnetic compatibility and interference B0290Z Other numerical methods/ voltage 5.5E+01 to 1.0E+02 V
中文摘要	By using the finite-difference time-domain method in two-dimension, the transient response of BJT (bipolar junction transistor) under the high power electromagnetic pulse was simulated. The distribution and variation of the electronic field, current density, and the temperature in the transistor during the burnout of the device were obtained and analyzed. The formations of hot spots during the process under the pulse with low and high magnitude were observed. That how the time and energy needed for burnout depended on the magnitude of the pulse was also obtained. When the magnitude of the pulse is relatively low, the hot spot locates near the collector in the breakdown tunnel. When the magnitude of the pulse is sufficiently high, the voltage between the base and the emitter will become very large because of the breakdown between the emitter and collector. Thus a new hot spot occurs due to the breakdown between the base and the emitter, and it will reach the burnout temperature when the magnitude is more than 100 V. With the increase of the magnitude, the time needed for burnout is decreasing exponentially, while the energy needed for burnout is increasing linearly with magnitude from 55 V to 100 V but decreasing with magnitude higher than about 100 V.
语种	中文 ; 中文
出版者	Nucl. Soc. China ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/11910]
专题	清华大学
推荐引用方式 GB/T 7714	Zhou Huai-an,Du Zheng-wei,Gong Ke. Transient response of bipolar junction transistor under intense electromagnetic pulse[J],2010, 2010.
APA	Zhou Huai-an,Du Zheng-wei,&Gong Ke.(2010).Transient response of bipolar junction transistor under intense electromagnetic pulse..
MLA	Zhou Huai-an,et al."Transient response of bipolar junction transistor under intense electromagnetic pulse".(2010).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。