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	Measurement and analysis of annealing factor and typical dc electronic parameters for SiGe HBT irradiated by neutrons and gamma rays in a pulsed reactor
	Liu Shuhuan ; Guo Xiaoqiang ; Li Da ; Lin Dongsheng ; Jiang Xinbiao ; Zhu Guangning ; Chen Wei ; Zhang Wei ; Zhou Hui ; Shao Beibei ; Li Junli
	2010-05-06 ; 2010-05-06
关键词	Practical/ annealing gamma-ray effects Ge-Si alloys heterojunction bipolar transistors leakage currents neutron effects semiconductor materials/ annealing dc electronic parameters HBT neutron beam radiation effects gamma ray radiation effects pulsed reactor dc common emitter static current gain junction leakage current breakdown voltage collector current radiation-induced damage SiGe/ B2560J Bipolar transistors B2550R Radiation effects on semiconductor devices B2550A Annealing processes in semiconductor technology/ SiGe/int Ge/int Si/int SiGe/bin Ge/bin Si/bin
中文摘要	The dc electronic parameters and annealing factor change of SiGe HBT irradiated by neutron and gamma-rays in a pulsed reactor were measured. The dc common emitter static current gain of the SiGe HBTs decreased by about 20% after the irradiation with 1*10/sup 13//sup -2/ neutron fluence and 257 Gy(Si) in gamma-ray total dose. The base current and the junction leakage current increased, whereas the collector current and the breakdown voltage decreased for SiGe HBT after the irradiation. Mechanisms of the radiation-induced damage to SiGe HBT are discussed.
语种	中文 ; 中文
出版者	Science Press ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/11375]
专题	清华大学
推荐引用方式 GB/T 7714	Liu Shuhuan,Guo Xiaoqiang,Li Da,et al. Measurement and analysis of annealing factor and typical dc electronic parameters for SiGe HBT irradiated by neutrons and gamma rays in a pulsed reactor[J],2010, 2010.
APA	Liu Shuhuan.,Guo Xiaoqiang.,Li Da.,Lin Dongsheng.,Jiang Xinbiao.,...&Li Junli.(2010).Measurement and analysis of annealing factor and typical dc electronic parameters for SiGe HBT irradiated by neutrons and gamma rays in a pulsed reactor..
MLA	Liu Shuhuan,et al."Measurement and analysis of annealing factor and typical dc electronic parameters for SiGe HBT irradiated by neutrons and gamma rays in a pulsed reactor".(2010).

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