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	Study on electroluminescence spectra of InxGa1-xN/GaN-MQWs materials with high indium contents
	Shao, JP ; Hu, H ; Guo, WP ; Wang, L ; Luo, Y ; Sun, CZ ; Han, ZB
	2010-05-06 ; 2010-05-06
关键词	InxGa1-xN/GaN-MQWs electroluminescence spectra internal field LIGHT-EMITTING-DIODES MULTIPLE-QUANTUM WELLS TEMPERATURE-DEPENDENCE DOTS PHOTOLUMINESCENCE SEMICONDUCTORS SHIFT LEDS Physics, Multidisciplinary
中文摘要	In this work, the abnormal double-peak in the electroluminescence spectra of InxGa1-xN/GaN multiple quantum wells (MQWs) light emitting diode structure materials with high indium contents was studied under different injection currents. The results show that the screening of internal electric field by injection current plays an important role in the radiation recombination process of InxGa1-xN/GaN-MQWs materials.
语种	中文 ; 中文
出版者	CHINESE PHYSICAL SOC ; BEIJING ; P O BOX 603, BEIJING 100080, PEOPLES R CHINA
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/11184]
专题	清华大学
推荐引用方式 GB/T 7714	Shao, JP,Hu, H,Guo, WP,et al. Study on electroluminescence spectra of InxGa1-xN/GaN-MQWs materials with high indium contents[J],2010, 2010.
APA	Shao, JP.,Hu, H.,Guo, WP.,Wang, L.,Luo, Y.,...&Han, ZB.(2010).Study on electroluminescence spectra of InxGa1-xN/GaN-MQWs materials with high indium contents..
MLA	Shao, JP,et al."Study on electroluminescence spectra of InxGa1-xN/GaN-MQWs materials with high indium contents".(2010).

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