| Smooth and vertical etching of GaAs/GaInP/AlGaInP using inductively coupled Cl-2/BCl3/CH4 plasma | |
| Hao, ZB ; Han, S ; Ren, F ; Xiong, B ; Sun, CZ ; Luo, Y | |
| 2010-05-06 ; 2010-05-06 | |
| 关键词 | ICP AlGaInP etch profile self-masking ridge/rib structures LASER-DIODES INP GAAS Physics, Applied |
| 中文摘要 | The inductively coupled plasma (ICP) etching of a GaAs/GaInP/AlGaInP heterostructure is studied using various gas mixtures. It is found that gas chemistry has a significant influence on the etch profile of the heterostructure, which is crucial for the fabrication of ridge/rib structures on AlGaInP-based materials. The self-masking effects of both aluminum oxide and InClx cause rough etched surfaces and sidewalls. Using Cl-2/BCl3/CH4 chemistry, the smooth and vertical etching of a GaAs/ GaInP/AlGaInP heterostructure has been realized at a moderate etch rate. |
| 语种 | 英语 ; 英语 |
| 出版者 | INST PURE APPLIED PHYSICS ; TOKYO ; TOYOKAIJI BLDG NO. 12, 6-9-6 SHINBASHI, MINATO-KU, TOKYO, 105, JAPAN |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/10734]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | Hao, ZB,Han, S,Ren, F,et al. Smooth and vertical etching of GaAs/GaInP/AlGaInP using inductively coupled Cl-2/BCl3/CH4 plasma[J],2010, 2010. |
| APA | Hao, ZB,Han, S,Ren, F,Xiong, B,Sun, CZ,&Luo, Y.(2010).Smooth and vertical etching of GaAs/GaInP/AlGaInP using inductively coupled Cl-2/BCl3/CH4 plasma.. |
| MLA | Hao, ZB,et al."Smooth and vertical etching of GaAs/GaInP/AlGaInP using inductively coupled Cl-2/BCl3/CH4 plasma".(2010). |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论