Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film

CORC > 上海硅酸盐研究所 > 中国科学院上海硅酸盐研究所 > 特种无机涂层重点实验室 > 期刊论文

	Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film
	Wang, Minhuan 1; Bian, Jiming 1,2; Sun, Hongjun 1; Liu, Hongzhu 1; Li, Xiaoxuan 1; Luo, Yingmin 1; Huang, Huolin 1; Zhang, Yuzhi 2
刊名	JOURNAL OF MATERIALS SCIENCE
	2016-09-01
卷号	51 期号:17 页码:8233-8239
英文摘要	High-quality VO2 films with precisely controlled thicknesses were grown on sapphire substrates by plasma-assisted oxide molecular beam epitaxy (MBE). To evaluate the degradation of semiconductor-metal transition (SMT) behavior of VO2 films under solar radiation, the temperature-driven SMT was investigated by measuring the electrical resistance during heating and cooling processes under solar simulator AM1.5, which provided illumination approximately matching the natural sunlight. The distinct reversible SMTs were observed for all the samples, whereas a remarkably conflicting trend in resistance change for extremely thin and thick samples was observed after exposure to the sunlight soaking system. The corresponding mechanism was proposed based on sunlight-induced resistance changes due to the transformation in the electron correlation and structural symmetry. The results might be especially attractive for some specific applications of VO2 films where solar radiation was inevitable.
WOS标题词	Science & Technology ; Technology
类目[WOS]	Materials Science, Multidisciplinary
研究领域[WOS]	Materials Science
关键词[WOS]	PHASE-TRANSITION ; INSULATOR-TRANSITION ; SAPPHIRE SUBSTRATE ; OPTICAL-PROPERTIES ; THIN-FILMS ; MODULATION ; GROWTH
收录类别	SCI
语种	英语
WOS记录号	WOS:000378542500036
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/22943]
专题	上海硅酸盐研究所_特种无机涂层重点实验室_期刊论文
作者单位	1.Dalian Univ Technol, Sch Phys & Optoelect Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China 2.Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China
推荐引用方式 GB/T 7714	Wang, Minhuan,Bian, Jiming,Sun, Hongjun,et al. Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film[J]. JOURNAL OF MATERIALS SCIENCE,2016,51(17):8233-8239.
APA	Wang, Minhuan.,Bian, Jiming.,Sun, Hongjun.,Liu, Hongzhu.,Li, Xiaoxuan.,...&Zhang, Yuzhi.(2016).Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film.JOURNAL OF MATERIALS SCIENCE,51(17),8233-8239.
MLA	Wang, Minhuan,et al."Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film".JOURNAL OF MATERIALS SCIENCE 51.17(2016):8233-8239.