采用射频磁控溅射在石英玻璃基底上反应溅射制备单斜相(M 相) VO2 薄膜. 利用V-VASE 和IR-VASE椭圆偏振仪及变温附件分别在0.5—3.5 eV (350—2500 nm) 和0.083—0.87 eV (1400—15000 nm) 入射光能量范围内对相变前后的VO2 薄膜进行光谱测试, 运用逐点拟合的方式, 并通过薄膜的吸收峰的特征, 在0.5—3.5 eV 范围内添加3 个Lorentz 谐振子色散模型和0.083—0.87 eV 范围内添加4 个Gaussion 振子模型对低温态半导体态的薄膜椭偏参数进行拟合, 再对高温金属态的薄膜添加7 个Lorentz 谐振子色散模型对进行椭偏参数的拟合, 得到了较为理想的拟合结果. 结果发现: 半导体态的VO2 薄膜的折射率在近红外-中红外基本保持在最大值3.27 不变, 且消光系数k 在此波段接近于零, 这是由于半导体态薄膜在可见光-近红外光范围内的吸收主要是自由载流子吸收, 而半导体态薄膜的d// 轨道内的电子态密度较小. 高温金属态的VO2 薄膜的折射率n 在近红外-中红外波段具有明显的增大趋势, 且在入射光能量为0.45 eV 时大于半导体态的折射率;消光系数k 在近红外波段迅速增大, 原因是在0.5—1.62 eV 范围内, 能带内的自由载流子浓度增加及电子在V3d 能带内发生带内的跃迁吸收, 使k 值迅速增加; 当能量小于0.5 eV 时k 值变化平缓, 是由于薄膜内自由载流子浓度和电子跃迁率趋于稳定所致.

The monoclinic phase (M phase) VO2 film is prepared on quartz glass substrate by a model MSP-3200 three-target co-sputter coater with RF magnetron reactive sputtering. The optical properties in incident energy ranges of 0.5-3.5 eV (350-2500 nm) and 0.083-0.87 eV (1400-15000 nm) of VO2 film are investigated by spectroscopic ellipsometry with variable temperature attachment. The good results are determined point by point with the three Lorentz harmonic oscillator dispersion models in the range of 0.5-3.5 eV and four Gaussion harmonic oscillator dispersion models in the range of 0.083-0.87 eV in the state of semiconductor below the transition temperature, while adding seven Lorentz harmonic oscillator dispersion models in the high temperature metallic state film results in the characteristic absorption peaks. The results show that the refractive index of the semiconductor state of VO2 film is maintained at maximum 3.27 and extinction coefficient k is close to zero in the near infrared-mid infrared, which is due to the fact that the absorption of semiconductor thin film in the VIS-NIR range is derived from the free carrier absorption and d(//) orbital of the semiconductor film has less electron density. The refractive index n of high temperature metallic state VO2 film has an obviously increasing trend in the near infrared-the mid infrared which is larger than the refractive index of the semiconductor state when the incident light energy is 0.45 eV. Extinction coefficient k increases rapidly in the near infrared, which is because the density of free carrier increases in the range of 0.5-1.62 eV and electron transition absorption augments within the V3d band. When the incident energy less than 0.5 eV, k value changes gently in the film because free carrier concentration and flow rates are stable.