Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC

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	Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC
	Zhou Tian-Yu 1,2; Liu Xue-Chao 1; Huang Wei 1; Zhuo Shi-Yi 1; Zheng Yan-Qing 1; Shi Er-Wei 1
刊名	CHINESE PHYSICS B
	2015-12-01
卷号	24 期号:12
关键词	SiC Ohmic contact Ni/Ta
英文摘要	A Ni/Ta bilayer is deposited on n-type 6H-SiC and then annealed at different temperatures to form an ohmic contact. The electrical properties are characterized by I-V curve measurement and the specific contact resistance is extracted by the transmission line method. The phase formation and microstructure of the Ni/Ta bilayer are studied after thermal annealing. The crystalline and microstructure properties are analyzed by using glance incident x-ray diffraction (GIXRD), Raman spectroscopy, and transmission electron microscopy. It is found that the transformation from the Schottky to the Ohmic occurs at 1050 degrees C and the GIXRD results show a distinct phase change from Ta2C to TaC at this temperature. A specific contact resistance of 6.5 x 10(-5) Omega.cm(2) is obtained for sample Ni(80 nm)/Ta(20 nm)/6H-SiC after being annealed at 1050 degrees C. The formation of the TaC phase is regarded as the main reason for the excellent Ohmic properties of the Ni/Ta contacts to 6H-SiC. Raman and TEM data reveal that the graphite carbon is drastically consumed by the Ta element, which can improve the contact thermal stability. A schematic diagram is proposed to illustrate the microstructural changes of Ni/Ta/6H-SiC when annealed at different temperatures.
WOS标题词	Science & Technology ; Physical Sciences
类目[WOS]	Physics, Multidisciplinary
研究领域[WOS]	Physics
关键词[WOS]	OHMIC CONTACTS ; SILICON-CARBIDE ; SINGLE-CRYSTAL ; HIGH-POWER
收录类别	SCI
语种	英语
WOS记录号	WOS:000366977800049
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/23329]
专题	上海硅酸盐研究所_人工晶体研究中心_期刊论文
作者单位	1.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Zhou Tian-Yu,Liu Xue-Chao,Huang Wei,et al. Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC[J]. CHINESE PHYSICS B,2015,24(12).
APA	Zhou Tian-Yu,Liu Xue-Chao,Huang Wei,Zhuo Shi-Yi,Zheng Yan-Qing,&Shi Er-Wei.(2015).Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC.CHINESE PHYSICS B,24(12).
MLA	Zhou Tian-Yu,et al."Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC".CHINESE PHYSICS B 24.12(2015).