Electrochemical fabrication and interfacial charge-transfer process of Ni/GaN(0001) electrodes

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 学科交叉综合研究部 > 潘革波团队

	Electrochemical fabrication and interfacial charge-transfer process of Ni/GaN(0001) electrodes
	Qin, SJ(秦双娇); Peng, F(彭飞); Chen, XQ(陈雪晴); Pan, GB(潘革波)
刊名	PHYSICAL CHEMISTRY CHEMICAL PHYSICS
	2016
卷号	18 期号:8
通讯作者	Pan, GB(潘革波)
英文摘要	The electrodeposition of Ni on single-crystal n-GaN(0001) film from acetate solution was investigated using scanning electron microscopy, X-ray diffraction, energy dispersive X-ray analysis, atomic force microscopy, and electrochemical techniques. The as-deposited Ni/n-GaN(0001) had a flat band potential of U-fb = -1.0 V vs. Ag/AgCl, which was much lower than that of bare GaN(0001). That is, a more feasible charge-transfer process occurred at the Ni/n-Ga(0001) interface. On the basis of a Tafel plot, an exchange current density of similar to 166 x 10(-4) mA cm(-2) was calculated. The nuclei density increased when the applied potential was varied from -0.9 V to -1.2 V and, eventually the whole substrate was covered. In addition, the current transient measurements revealed that the Ni deposition process followed instantaneous nucleation in 5 mM Ni(CH3COO)(2) + 0.5 M H3BO3.
关键词[WOS]	METAL ELECTRODEPOSITION ; GAN ; SEMICONDUCTORS ; CARRIER ; ALLOYS ; GROWTH ; MOVPE
收录类别	SCI
语种	英语
WOS记录号	WOS:000371953000037
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4732]
专题	苏州纳米技术与纳米仿生研究所_学科交叉综合研究部_潘革波团队
推荐引用方式 GB/T 7714	Qin, SJ,Peng, F,Chen, XQ,et al. Electrochemical fabrication and interfacial charge-transfer process of Ni/GaN(0001) electrodes[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2016,18(8).
APA	Qin, SJ,Peng, F,Chen, XQ,&Pan, GB.(2016).Electrochemical fabrication and interfacial charge-transfer process of Ni/GaN(0001) electrodes.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,18(8).
MLA	Qin, SJ,et al."Electrochemical fabrication and interfacial charge-transfer process of Ni/GaN(0001) electrodes".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 18.8(2016).