Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 先进材料研究部 > 李立强团队

	Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors
	Wu, KJ(吴昆杰); Li, HW(李红卫); Li, LQ(李立强); Zhang, SN(张素娜); Chen, XS(陈小松); Xu, ZY(徐泽洋); Zhang, X; Hu, WP; Chi, LF; Gao, XK
刊名	LANGMUIR
	2016
卷号	32 期号:25
通讯作者	Li, LQ(李立强) ; Hu, WP ; Chi, LF
英文摘要	Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.
关键词[WOS]	FIELD-EFFECT TRANSISTORS ; THIN-FILMS ; ELECTRICAL CHARACTERISTICS ; ORIENTATION CONTROL ; SINGLE-CRYSTALS ; PERFORMANCE ; MONOLAYER ; SURFACE ; CHANNEL ; STABILITY
收录类别	SCI
语种	英语
WOS记录号	WOS:000378973300004
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4632]
专题	苏州纳米技术与纳米仿生研究所_先进材料研究部_李立强团队
推荐引用方式 GB/T 7714	Wu, KJ,Li, HW,Li, LQ,et al. Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors[J]. LANGMUIR,2016,32(25).
APA	Wu, KJ.,Li, HW.,Li, LQ.,Zhang, SN.,Chen, XS.,...&Meng, YC.(2016).Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors.LANGMUIR,32(25).
MLA	Wu, KJ,et al."Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors".LANGMUIR 32.25(2016).