Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 孙钱团队

	Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si
	Sun, Y(孙逸); Zhou, K; Sun, Q(孙钱); Liu, JP(刘建平); Feng, MX(冯美鑫); Li, ZC(李增成); Zhou, Y(周宇); Zhang, LQ(张立群); Li, DY(李德尧); Zhang, SM(张书明)
刊名	NATURE PHOTONICS
	2016
卷号	10 期号:9
通讯作者	Sun, Q(孙钱)
英文摘要	Silicon photonics would greatly benefit from efficient, visible on-chip light sources that are electrically driven at room temperature(1,2). To fully utilize the benefits of large-scale, low-cost manufacturing foundries, it is highly desirable to grow direct bandgap III-V semiconductor lasers directly on Si3-5. Here, we report the demonstration of a blue-violet (413 nm) InGaN-based laser diode grown directly on Si that operates under continuous-wave current injection at room temperature, with a threshold current density of 4.7 kA cm(-2). The heteroepitaxial growth of GaN on Si is confronted with a large mismatch in both the lattice constant and the coefficient of thermal expansion, often resulting in a high density of defects and even microcrack networks. By inserting an Al-composition step-graded AIN/AIGaN multilayer buffer between the Si and GaN, we have not only successfully eliminated crack formation, but also effectively reduced the dislocation density. The result is the realization of a blue-violet InGaN-based laser on Si.
关键词[WOS]	X-RAY-DIFFRACTION ; EPITAXIAL LAYERS ; GAN ; SILICON ; DIODES ; DEGRADATION ; RELAXATION ; OPERATION ; LIGHT
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000382800500013
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4710]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队
推荐引用方式 GB/T 7714	Sun, Y,Zhou, K,Sun, Q,et al. Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si[J]. NATURE PHOTONICS,2016,10(9).
APA	Sun, Y.,Zhou, K.,Sun, Q.,Liu, JP.,Feng, MX.,...&Yang, H.(2016).Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si.NATURE PHOTONICS,10(9).
MLA	Sun, Y,et al."Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si".NATURE PHOTONICS 10.9(2016).