Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC
	Liang, F; Chen, P; Zhao, DG; Jiang, DS; Liu, ZS; Zhu, JJ; Yang, J; Liu, W; He, XG; Li, XJ
刊名	CHEMICAL PHYSICS LETTERS
	2016
卷号	651
通讯作者	Chen, P
英文摘要	A large field emission current density of 2.55 A/cm(2) at 20.9 V and a low turn-on voltage of 7.28 V is obtained from the Si-doped 50 nm-thick AlN film, synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates, which is the best result reported for AlN film. Accompanying with atomic force surface micro-images, it is found that this current is achieved owing to a blunting process under a high voltage of 95 V, which can lead to a decrease of the root mean square roughness from 4.23 to 1.03 nm. (C) 2016 Elsevier B.V. All rights reserved.
关键词[WOS]	NEGATIVE ELECTRON-AFFINITY ; ALUMINUM NITRIDE ; DISPLAY STRUCTURE ; CARBON NANOTUBES ; THIN-FILMS ; SURFACES ; GALLIUM
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000377203300015
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4788]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Liang, F,Chen, P,Zhao, DG,et al. Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC[J]. CHEMICAL PHYSICS LETTERS,2016,651.
APA	Liang, F.,Chen, P.,Zhao, DG.,Jiang, DS.,Liu, ZS.,...&Du, GT.(2016).Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC.CHEMICAL PHYSICS LETTERS,651.
MLA	Liang, F,et al."Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC".CHEMICAL PHYSICS LETTERS 651(2016).