Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC
	Liang, F; Chen, P; Zhao, DG; Jiang, DS; Zhao, ZJ; Liu, ZS; Zhu, JJ; Yang, J; Liu, W; He, XG
刊名	CHINESE PHYSICS B
	2016
卷号	25 期号:5
通讯作者	Chen, P
英文摘要	We have investigated the electron affinity of Si-doped AlN films (N-Si = 1.0 x 10(18)-1.0 x 10(19) cm(-3)) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type (001)6H-SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy (UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 eV for the 400-nm-thick one. Accompanying the x-ray photoelectron spectroscopy (XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.
关键词[WOS]	SCHOTTKY-BARRIER HEIGHT ; FIELD-EMISSION ; ALUMINUM NITRIDE ; DISPLAY STRUCTURE ; TITANIUM ; SURFACES ; DIAMOND
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000375681800061
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4785]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Liang, F,Chen, P,Zhao, DG,et al. Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC[J]. CHINESE PHYSICS B,2016,25(5).
APA	Liang, F.,Chen, P.,Zhao, DG.,Jiang, DS.,Zhao, ZJ.,...&Du, GT.(2016).Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC.CHINESE PHYSICS B,25(5).
MLA	Liang, F,et al."Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC".CHINESE PHYSICS B 25.5(2016).