Initial heteroepitaxial growth and characterization of GaAs on Ge (100) by all-solid-source molecular beam epitaxy

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > SONY团队

	Initial heteroepitaxial growth and characterization of GaAs on Ge (100) by all-solid-source molecular beam epitaxy
	He, W; Lu, SL(陆书龙); Yang, H(杨辉)
刊名	JOURNAL OF INFRARED AND MILLIMETER WAVES
	2016
卷号	35 期号:2
通讯作者	He, W
英文摘要	The initial heteroepitaxial growth stages of GaAs on Ge (100) by all-solid-source molecular beam epitaxy (MBE) were studied by means of reflection high-energy electron diffraction (RHEED), high resolution X-ray diffraction (XRD) and atomic force microscopy, as well as the effects of different growth conditions to the epitaxial layer qualities. It was indicated that high growth temperatures or low growth rates enabled a layer-by-layer growth mode of initial GaAs nucleation layer which was evidenced by RHEED patterns. However, the combination of low growth temperatures and low growth rates for the initial GaAs layer gave lower full-width at half-maximum value of rocking curves and lower surface roughness of the epitaxial materials, owing to the decrease of the lattice mismatch between substrates and epi-layers.
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000375514900015
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4865]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队
推荐引用方式 GB/T 7714	He, W,Lu, SL,Yang, H. Initial heteroepitaxial growth and characterization of GaAs on Ge (100) by all-solid-source molecular beam epitaxy[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2016,35(2).
APA	He, W,Lu, SL,&Yang, H.(2016).Initial heteroepitaxial growth and characterization of GaAs on Ge (100) by all-solid-source molecular beam epitaxy.JOURNAL OF INFRARED AND MILLIMETER WAVES,35(2).
MLA	He, W,et al."Initial heteroepitaxial growth and characterization of GaAs on Ge (100) by all-solid-source molecular beam epitaxy".JOURNAL OF INFRARED AND MILLIMETER WAVES 35.2(2016).