Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 大科学装置

	Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?
	Su, ZC; Ning, JQ(宁吉强); Deng, Z; Wang, XH; Xu, SJ; Wang, RX(王荣新); Lu, SL(陆书龙); Dong, JR(董建荣); Yang, H(杨辉)
刊名	NANOSCALE
	2016
卷号	8 期号:13
通讯作者	Xu, SJ
英文摘要	Anderson localization is a predominant phenomenon in condensed matter and materials physics. In fact, localized and delocalized states often co-exist in one material. They are separated by a boundary called the mobility edge. Mott transition may take place between these two regimes. However, it is widely recognized that an apparent demonstration of Anderson localization or Mott transition is a challenging task. In this article, we present a direct optical observation of a transition of radiative recombination dominant channels from delocalized (i.e., local extended) states to Anderson localized states in the GaInP base layer of a GaInP/GaAs single junction solar cell by the means of the variable-temperature electroluminescence (EL) technique. It is found that by increasing temperature, we can boost a remarkable transition of radiative recombination dominant channels from the delocalized states to the localized states. The delocalized states are induced by the local atomic ordering domains (InP/GaP monolayer superlattices) while the localized states are caused by random distribution of indium (gallium) content. The efficient transfer and thermal redistribution of carriers between the two kinds of electronic states was revealed to result in both a distinct EL mechanism transition and an electrical resistance evolution with temperature. Our study gives rise to a self-consistent precise picture for carrier localization and transfer in a GaInP alloy, which is an extremely technologically important energy material for fabricating high-efficiency photovoltaic devices.
关键词[WOS]	TRANSVERSE ANDERSON LOCALIZATION ; TANDEM SOLAR-CELLS ; 2 DIMENSIONS ; LIGHT ; DIFFUSION ; LUMINESCENCE ; TRANSPORT ; EXCITONS ; LATTICES ; CARRIERS
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000373060600022
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4718]
专题	苏州纳米技术与纳米仿生研究所_大科学装置
推荐引用方式 GB/T 7714	Su, ZC,Ning, JQ,Deng, Z,et al. Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?[J]. NANOSCALE,2016,8(13).
APA	Su, ZC.,Ning, JQ.,Deng, Z.,Wang, XH.,Xu, SJ.,...&Yang, H.(2016).Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?.NANOSCALE,8(13).
MLA	Su, ZC,et al."Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?".NANOSCALE 8.13(2016).