The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures

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	The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures
	Jahn, U; Musolino, M; Lahnemann, J; Dogan, P; Garrido, SF; Wang, JF; Xu, K(徐科); Cai, D; Bian, LF(边历峰); Gong, XJ(弓哓晶)
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2016
卷号	31 期号:6
通讯作者	Jahn, U
英文摘要	GaN several tens of mu m thick has been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates were covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam epitaxy. During the first low-temperature (low-T) HVPE step, stacking faults (SF) form, which show distinct luminescence lines and stripe-like features in the cathodoluminescence images of the cross-section of the layers. These cathodoluminescence features provide an insight into the growth process. During a second high-temperature (high-T) step, the SFs disappear, and the luminescence of this part of the GaN layer is dominated by the donor-bound exciton. For templates consisting of both a thin AlN buffer and GaN nanostructures, the incorporation of silicon into the GaN grown by HVPE is not observed. Moreover, the growth mode of the (high-T) HVPE step depends on the specific structure of the AlN/GaN template, where in the first case, epitaxy is dominated by the formation of slowly growing facets, while in the second case, epitaxy proceeds directly along the c-axis. For templates without GaN nanostructures, cathodoluminescence spectra excited close to the Si/GaN interface show a broadening toward higher energies, indicating the incorporation of silicon at a high dopant level.
关键词[WOS]	TEMPLATED (111)SI SUBSTRATE ; MOLECULAR-BEAM EPITAXY ; THICK GAN ; LATERAL OVERGROWTH ; GROWTH ; HVPE ; FILMS ; CATHODOLUMINESCENCE ; NANOHETEROEPITAXY ; CRYSTAL
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000378201000023
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4843]
专题	苏州纳米技术与纳米仿生研究所_测试分析平台
推荐引用方式 GB/T 7714	Jahn, U,Musolino, M,Lahnemann, J,et al. The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2016,31(6).
APA	Jahn, U.,Musolino, M.,Lahnemann, J.,Dogan, P.,Garrido, SF.,...&Yang, H.(2016).The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,31(6).
MLA	Jahn, U,et al."The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 31.6(2016).