Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate

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	Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate
	Jiang, T; Xu, SR; Zhang, JC; Li, PX; Huang, J(黄俊); Ren, ZY; Zhu, JD; Chen, ZB; Zhao, Y; Hao, Y
刊名	AIP ADVANCES
	2016
卷号	6 期号:3
通讯作者	Xu, SR ; Hao, Y
英文摘要	The epitaxial layers of InGaN/GaN MQWs structure were grown on both planar and vicinal sapphire substrates by metal organic chemical vapor deposition. By comparing the epitaxial layers grown on planar substrate, the sample grown on 4 degrees misoriented from c-plane toward <10<(1)over bar>0> m-plane substrate exhibited many variations both on surface morphology and optical properties according to the scanning electronic microscopy and cathodoluminescence (CL) spectroscopy results. Many huge steps were observed in the misoriented sample and a large amount of V-shape defects located around the boundary of the steps. Atoms force microscopy images show that the steps were inclined and deep grooves were formed at the boundary of the adjacent steps. Phase separation was observed in the CL spectra. CL mapping results also indicated that the deep grooves could effectively influence the localization of Indium atoms and form an In-rich region. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
关键词[WOS]	CHEMICAL-VAPOR-DEPOSITION ; LIGHT-EMITTING-DIODES ; EPITAXIAL LATERAL OVERGROWTH ; MOLECULAR-BEAM EPITAXY ; RAMAN-SCATTERING ; MOVPE GROWTH ; GAN ; DISLOCATION ; CATHODOLUMINESCENCE ; LAYER
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000373684200096
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4837]
专题	苏州纳米技术与纳米仿生研究所_测试分析平台
推荐引用方式 GB/T 7714	Jiang, T,Xu, SR,Zhang, JC,et al. Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate[J]. AIP ADVANCES,2016,6(3).
APA	Jiang, T.,Xu, SR.,Zhang, JC.,Li, PX.,Huang, J.,...&Hao, Y.(2016).Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate.AIP ADVANCES,6(3).
MLA	Jiang, T,et al."Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate".AIP ADVANCES 6.3(2016).