Cathodoluminescence properties of Pr, Tm co-implanted GaN thin films

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 测试分析平台

	Cathodoluminescence properties of Pr, Tm co-implanted GaN thin films
	Wang, XD; Mo, YJ; Yang, MM; Zeng, XH(曾雄辉); Wang, JF(王建峰); Xu, K(徐科)
刊名	OPTICAL MATERIALS EXPRESS
	2016
卷号	6 期号:5
通讯作者	Wang, XD ; Zeng, XH(曾雄辉)
英文摘要	In this work, Pr and Tm co-doped GaN thin films were prepared by ion implantation. After a thermal annealing treatment for the lattice recovery and ions activation, temperature-dependent cathodoluminescence (CL) spectroscopy was applied to investigate the luminescent properties. At room temperature, the intensity ratio of blue emission to infrared emission of Tm ions was decreased as the implantation dose of Pr ions was increased, which is due to the energy transfer between Pr and Tm ions. In addition, the 467 nm blue emission of Tm and the 528 nm green emission of Pr were observed only at low temperature. A model was proposed to illuminate the light emission mechanism of Pr and Tm co-implanted GaN thin films. (C) 2016 Optical Society of America
关键词[WOS]	EARTH-DOPED GAN ; ELECTROLUMINESCENT DEVICES ; LUMINESCENCE ; ENHANCEMENT ; EMISSION ; GROWTH
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000376242000030
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4661]
专题	苏州纳米技术与纳米仿生研究所_测试分析平台
推荐引用方式 GB/T 7714	Wang, XD,Mo, YJ,Yang, MM,et al. Cathodoluminescence properties of Pr, Tm co-implanted GaN thin films[J]. OPTICAL MATERIALS EXPRESS,2016,6(5).
APA	Wang, XD,Mo, YJ,Yang, MM,Zeng, XH,Wang, JF,&Xu, K.(2016).Cathodoluminescence properties of Pr, Tm co-implanted GaN thin films.OPTICAL MATERIALS EXPRESS,6(5).
MLA	Wang, XD,et al."Cathodoluminescence properties of Pr, Tm co-implanted GaN thin films".OPTICAL MATERIALS EXPRESS 6.5(2016).