Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

	Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides
	Zhiqiang Liu ; Xiaoyan Yi ; Zhiguo Yu ; Gongdong Yuan ; Yang Liu ; Junxi Wang ; Jinmin Li ; Na Lu ; Ian Ferguson ; Yong Zhang
刊名	scientific reports
	2016
卷号	6 页码:19537
学科主题	半导体器件
收录类别	SCI
公开日期	2017-03-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28111]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Zhiqiang Liu,Xiaoyan Yi,Zhiguo Yu,et al. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides[J]. scientific reports,2016,6:19537.
APA	Zhiqiang Liu.,Xiaoyan Yi.,Zhiguo Yu.,Gongdong Yuan.,Yang Liu.,...&Yong Zhang.(2016).Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides.scientific reports,6,19537.
MLA	Zhiqiang Liu,et al."Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides".scientific reports 6(2016):19537.