Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te)

	Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te)
	Le Huang ; Fugen Wu ; Jingbo Li
刊名	the journal of chemical physics
	2016
卷号	144 期号:11 页码:114708
学科主题	半导体材料
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27779]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Le Huang,Fugen Wu,Jingbo Li. Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te)[J]. the journal of chemical physics,2016,144(11):114708.
APA	Le Huang,Fugen Wu,&Jingbo Li.(2016).Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te).the journal of chemical physics,144(11),114708.
MLA	Le Huang,et al."Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te)".the journal of chemical physics 144.11(2016):114708.