Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts

	Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts
	Boyong Feng ; Shaoyun Huang ; Jiyin Wang ; Dong Pan ; Jianghua Zhao ; H. Q. Xu
刊名	journal of applied physics
	2016
卷号	119 期号:5 页码:054304
学科主题	半导体物理
收录类别	SCI
公开日期	2017-03-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27937]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Boyong Feng,Shaoyun Huang,Jiyin Wang,et al. Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts[J]. journal of applied physics,2016,119(5):054304.
APA	Boyong Feng,Shaoyun Huang,Jiyin Wang,Dong Pan,Jianghua Zhao,&H. Q. Xu.(2016).Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts.journal of applied physics,119(5),054304.
MLA	Boyong Feng,et al."Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts".journal of applied physics 119.5(2016):054304.