Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate

	Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate
	Xiao-Li Li ; Xiao-Fen Qiao ; Wen-Peng Han ; Xin Zhang ; Qing-Hai Tan ; Tao Chen ; Ping-Heng Tan
刊名	condensed matter
	2016
卷号	27 期号:14 页码:145704
学科主题	半导体物理
收录类别	SCI
公开日期	2017-03-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28026]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Xiao-Li Li,Xiao-Fen Qiao,Wen-Peng Han,et al. Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate[J]. condensed matter,2016,27(14):145704.
APA	Xiao-Li Li.,Xiao-Fen Qiao.,Wen-Peng Han.,Xin Zhang.,Qing-Hai Tan.,...&Ping-Heng Tan.(2016).Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate.condensed matter,27(14),145704.
MLA	Xiao-Li Li,et al."Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate".condensed matter 27.14(2016):145704.