Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te). | |
Le Huang ; Fugen Wu ; Jingbo Li | |
刊名 | the journal of chemical physics |
2016 | |
卷号 | 144期号:11页码:114708 |
学科主题 | 半导体物理 |
收录类别 | SCI |
公开日期 | 2017-03-16 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/27984] |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Le Huang,Fugen Wu,Jingbo Li. Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te).[J]. the journal of chemical physics,2016,144(11):114708. |
APA | Le Huang,Fugen Wu,&Jingbo Li.(2016).Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te)..the journal of chemical physics,144(11),114708. |
MLA | Le Huang,et al."Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te).".the journal of chemical physics 144.11(2016):114708. |
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