High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction

	High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction
	Longxing Su; Quanlin Zhang; Tianzhun Wu; Mingming Chen; Yuquan Su; Yuan Zhu; Rong Xiang; Xuchun Gui; Zikang Tang
刊名	APPLIED PHYSICS LETTERS
	2014
英文摘要	Lattice-match p-GaN and n-ZnO bilayers were heteroepitaxially grown on the c-sapphire substrate by metal organic chemical vapor deposition and molecular beam epitaxy technique, respectively. X-ray diffraction and photoluminescence investigations revealed the high crystal quality of the bilayer films. Subsequently, a p-GaN/n-ZnO heterojunction photodetector was fabricated. The p-n junction exhibited a clear rectifying I-V characteristic with a turn-on voltage of 3.7 V. At zero-bias voltage, the peak responsivity was 0.68 mA/W at 358 nm, which is one of the best performances reported for p-GaN/n-ZnO heterojunction detectors due to the excellent crystal quality of the bilayer films. These show that the high-performance p-GaN/n-ZnO heterojunction diode is potential for applications of portable UV detectors without driving power.
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.siat.ac.cn:8080/handle/172644/5806]
专题	深圳先进技术研究院_医工所
作者单位	APPLIED PHYSICS LETTERS
推荐引用方式 GB/T 7714	Longxing Su,Quanlin Zhang,Tianzhun Wu,et al. High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction[J]. APPLIED PHYSICS LETTERS,2014.
APA	Longxing Su.,Quanlin Zhang.,Tianzhun Wu.,Mingming Chen.,Yuquan Su.,...&Zikang Tang.(2014).High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction.APPLIED PHYSICS LETTERS.
MLA	Longxing Su,et al."High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction".APPLIED PHYSICS LETTERS (2014).