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	A Novel Infrared Sensor Structure compatible to Standard CMOS Process
	Yundong Wu; Rong Chen; Wenjian Jiang; Ting Yu; Fengqi Yu
	2010
会议名称	2010 2nd International Conference on Modeling, Simulation, and Visualization Methods, WMSVM 2010,
英文摘要	This paper presents a new type of un-cooled thermal infrared sensor, which is compatible to standard CMOS process. The proposed infrared sensor adopts a suspended n-well containing several p+/n-well diodes as infrared sensing element. The thermal analysis indicates that the sensor exhibits excellent steady-state and transient thermal property. The theoretical analysis shows that the temperature coefficient is independent of temperature and process parameters, which is not true for conventional infrared sensors using single p-n diode. The simulation results based on SMIC 0.18關m CMOS process are consistent with theoretical ones. Compared to traditional p-n diode infrared sensor, the proposed structure is more suitable for constructing an infrared focal plane array (IRFPA) for imaging applications
收录类别	EI
语种	英语
内容类型	会议论文
源URL	[http://ir.siat.ac.cn:8080/handle/172644/2776]
专题	深圳先进技术研究院_集成所
作者单位	2010
推荐引用方式 GB/T 7714	Yundong Wu,Rong Chen,Wenjian Jiang,et al. A Novel Infrared Sensor Structure compatible to Standard CMOS Process[C]. 见:2010 2nd International Conference on Modeling, Simulation, and Visualization Methods, WMSVM 2010, .

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