Stabilization and Manipulation of Electronically Phase-Separated Ground States in Defective Indium Atom Wires on Silicon
Zhang Hui; Ming Fangfei; Kim Hyun-Jung; Zhu Hongbin; Zhang Qiang; Weitering Hanno H.; Xiao Xudong; Zeng Changgan; Cho Jun-Hyung; Zhang Zhenyu
刊名PHYSICAL REVIEW LETTERS
2014
英文摘要Exploration and manipulation of electronic states in low-dimensional systems are of great importance in the fundamental and practical aspects of nanomaterial and nanotechnology. Here, we demonstrate that the incorporation of vacancy defects into monatomic indium wires on n-type Si(111) can stabilize electronically phase-separated ground states where the insulating 8×2 and metallic 4×1 phases coexist. Furthermore, the areal ratio of the two phases in the phase-separated states can be tuned reversibly by electric field or charge doping, and such tunabilities can be quantitatively captured by first principles-based modeling and simulations. The present results extend the realm of electronic phase separation from strongly correlated d-electron materials typically in bulk form to weakly interacting sp-electron systems in reduced dimensionality.
收录类别SCI
原文出处http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.113.196802
语种英语
内容类型期刊论文
源URL[http://ir.siat.ac.cn:8080/handle/172644/5371]  
专题深圳先进技术研究院_集成所
作者单位PHYSICAL REVIEW LETTERS
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GB/T 7714
Zhang Hui,Ming Fangfei,Kim Hyun-Jung,et al. Stabilization and Manipulation of Electronically Phase-Separated Ground States in Defective Indium Atom Wires on Silicon[J]. PHYSICAL REVIEW LETTERS,2014.
APA Zhang Hui.,Ming Fangfei.,Kim Hyun-Jung.,Zhu Hongbin.,Zhang Qiang.,...&Zhang Zhenyu.(2014).Stabilization and Manipulation of Electronically Phase-Separated Ground States in Defective Indium Atom Wires on Silicon.PHYSICAL REVIEW LETTERS.
MLA Zhang Hui,et al."Stabilization and Manipulation of Electronically Phase-Separated Ground States in Defective Indium Atom Wires on Silicon".PHYSICAL REVIEW LETTERS (2014).
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