n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE

CORC > 上海硅酸盐研究所 > 中国科学院上海硅酸盐研究所 > 特种无机涂层重点实验室 > 期刊论文

	n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE
	Wang, Minhuan 1; Bian, Jiming 1,2; Sun, Hongjun 1; Liu, Weifeng 1; Zhang, Yuzhi ; Luo, Yingmin 1
刊名	APPLIED SURFACE SCIENCE
	2016-12-15
卷号	389 页码:199-204
关键词	Vanadium oxide p-GaN Molecular beam epitaxy Phase transition
英文摘要	High quality VO2 films with precisely controlled thickness were grown on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE). Results indicated that a distinct reversible semiconductor-to metal (SMT) phase transition was observed for all the samples in the temperature dependent electrical resistance measurement, and the influence of VO2 layer thickness on the SMT properties of the as-grown n-VO2/p-GaN based nitride-oxide heterostructure was investigated. Meanwhile, the clear rectifying transport characteristics originated from the n-VO2/p-GaN interface were demonstrated before and after SMT of the VO2 over layer, which were attributed to the p-n junction behavior and Schottky contact character, respectively. Moreover, the X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO2 films was principally composed of V4+ with trace amount of V5+. The design and modulation of the n-VO2/p-GaN based heterostructure devices will benefit significantly from these achievements. (C) 2016 Elsevier B.V. All rights reserved.
WOS标题词	Science & Technology ; Physical Sciences ; Technology
类目[WOS]	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
研究领域[WOS]	Chemistry ; Materials Science ; Physics
关键词[WOS]	METAL-INSULATOR-TRANSITION ; PHASE-TRANSITION ; FILMS
收录类别	SCI
语种	英语
WOS记录号	WOS:000384577600024
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/22042]
专题	上海硅酸盐研究所_特种无机涂层重点实验室_期刊论文
作者单位	1.Dalian Univ Technol, Sch Phys & Optoelect Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China 2.Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China
推荐引用方式 GB/T 7714	Wang, Minhuan,Bian, Jiming,Sun, Hongjun,et al. n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE[J]. APPLIED SURFACE SCIENCE,2016,389:199-204.
APA	Wang, Minhuan,Bian, Jiming,Sun, Hongjun,Liu, Weifeng,Zhang, Yuzhi,&Luo, Yingmin.(2016).n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE.APPLIED SURFACE SCIENCE,389,199-204.
MLA	Wang, Minhuan,et al."n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE".APPLIED SURFACE SCIENCE 389(2016):199-204.