In-Plane Optical Anisotropy of Layered Gallium Telluride

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	In-Plane Optical Anisotropy of Layered Gallium Telluride
	Huang, SX ; Tatsumi, Y ; Ling, X ; Guo, HH ; Wang, ZQ ; Watson, G ; Puretzky, AA ; Geohegan, DB ; Kong, J ; Li, J ; Yang, T ; Saito, R ; Dresselhaus, MS
刊名	ACS NANO
	2016-09-01
卷号	10 期号:9 页码:8964-8972
关键词	light-matter interaction electron-photon interaction polarization-dependent Raman spectroscopy polarization-dependent optical extinction group theory optical transition selection rules
ISSN号	1936-0851
通讯作者	Ling, X ; Dresselhaus, MS (reprint author), MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA. ; Dresselhaus, MS (reprint author), MIT, Dept Phys, Cambridge, MA 02139 USA.
学科主题	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2016-12-28
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/76279]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Huang, SX,Tatsumi, Y,Ling, X,et al. In-Plane Optical Anisotropy of Layered Gallium Telluride[J]. ACS NANO,2016,10(9):8964-8972.
APA	Huang, SX.,Tatsumi, Y.,Ling, X.,Guo, HH.,Wang, ZQ.,...&Dresselhaus, MS.(2016).In-Plane Optical Anisotropy of Layered Gallium Telluride.ACS NANO,10(9),8964-8972.
MLA	Huang, SX,et al."In-Plane Optical Anisotropy of Layered Gallium Telluride".ACS NANO 10.9(2016):8964-8972.