Hall Measurements on Silicon Field Effect Transistor Structures | |
刊名 | Ibm Journal of Research and Development |
1964 | |
卷号 | 8期号:4页码:427-429 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://202.127.2.71:8080/handle/181331/11213] |
专题 | 上海技术物理研究所_全文传递文献库_qwcd 期刊论文 |
推荐引用方式 GB/T 7714 | . Hall Measurements on Silicon Field Effect Transistor Structures[J]. Ibm Journal of Research and Development,1964,8(4):427-429. |
APA | (1964).Hall Measurements on Silicon Field Effect Transistor Structures.Ibm Journal of Research and Development,8(4),427-429. |
MLA | "Hall Measurements on Silicon Field Effect Transistor Structures".Ibm Journal of Research and Development 8.4(1964):427-429. |
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