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题名	多层透明导电薄膜的制备与性能研究
作者	龙国云
学位类别	硕士
答辩日期	2013
授予单位	中国科学院上海光学精密机械研究所
导师	耿永友
关键词	透明导电薄膜 ZnS/Ag/ZnS ZnS-SiO2/Ag/ ZnS-SiO2
其他题名	Preparation and characterization of multilayer transparent and conductive films
中文摘要	随着科技的发展，透明导电薄膜得到了越来越多的应用，例如各类触摸屏、太阳能电池、液晶显示器等。到目前为止，最常用的是基于In2O3，ZnO或SnO2透明导电氧化物（Transparent and Conductive Oxides ，TCO），但是新型的设备对透明导电材料提出了更高的要求，比如更低的电阻率、更高的透过率和更好的环境稳定性等。介电层/金属层/介电层（Dielectric/Metal/Dielectric，D/M/D）结构多层透明导电薄膜由于可以得到优于单层TCO或金属电极的光学、电学性能，而且可以在低温下沉积到廉价的塑料衬底上，因此是一种很好的替代品。 本论文中，首先根据电磁波传播矩阵理论模拟不同结构多层薄膜在550nm处透过率并选取最优结构，之后利用磁控溅射方法在K9玻璃和PET塑料（Polyethylene Terephthalate）衬底上分别制备了ZnS/Ag/ZnS（ZAZ）和ZnS-SiO2/Ag/ZnS-SiO2多层薄膜。为了获得更优良的光、电性能，对部分样品进行了退火处理。通过掠面X射线衍射（Glancing angle X-Ray Diffraction ，GXRD）和聚焦离子束扫描电子显微镜（Focused Ion Beam Scanning Electron Microscopy，FIB-SEM）对样品的微观结构和表面形貌进行表征。样品的电学性能和光学性能则分别用Hall效应测试仪和紫外/可见分光光度计进行了测试。 考虑到样品的导电性能，在K9玻璃上分别制备了ZnS (43nm)/Ag (10nm)/ZnS (43nm)和ZnS (43nm)/Ag (12nm)/ZnS (43nm)多层薄膜。GXRD结果表明ZnS和Ag均为非晶态。光学、电学性能测试结果显示Ag膜层厚度对样品性能影响很大，当Ag膜层厚度为12nm时样品性能较优，其最高透过率达到83.3%，表面电阻最低为14.1Ω/sq，性能指数为8.52 mΩ-1。 为了进一步提高样品的透光性能和导电性能，在K9玻璃上制备了ZnS-SiO2 (46nm)/Ag (11nm)/ZnS-SiO2(46nm)多层薄膜。实验结果表明样品在200 oC退火后性能最优，最高透过率为88.4%，表面电阻达到9.7Ω/sq ，性能指数为25.9 mΩ-1。对300oC退火后样品的X射线光电子能谱测（X-ray Photoelectron Spectroscopy，XPS）测试结果 表明：退火加速了Ag粒子的扩散，导致样品光、电性能的下降。为了测试样品的环境稳定性，我们将样品在85oC，85%RH条件下老化100h，之后将其与老化前样品进行对比，结果显示样品性能变化较小，显示出优良的湿热稳定性。 为了进一步拓展ZnS-SiO2/Ag/ZnS-SiO2多层薄膜的应用，在PET衬底上制备了同样结构的薄膜并对其分别进行了弯折和老化测试。结果显示PET衬底较大程度地降低了样品的光、电性能，样品最大透过率为71.57%，表面电阻最低为35.44 Ω/sq，性能指数降至0.716 mΩ-1。老化实验结果显示样品具有优异的环境稳定性，而弯曲实验则表明样品在1000次弯折后透光率下降较多，导电性能下降严重。
英文摘要	With the development of technology, transparent and conductive films (TCFs) are used widely in a variety of photosensitive electronic devices , such as touch screen, solar cells, liquid crystal displays. Until now, transparent and conductive oxides (TCO) based on In2O3, ZnO, or SnO2 are commonly used, but advanced devices require new transparent and conducive films with lower resistance, higher transmittance and long-term durability. Dielectric/Metal/Dielectric multilayer structures have emerged as an interesting alternative because they provide optical and electrical characteristics globally superior to those attainable with a single-layer TCO or metal electrode and can be deposited at low temperatures onto inexpensive plastic substrates. In this thesis, the structure of the multilayer films were designed theoretically using characteristic matrix theory, the optimal structure was determined when the transmittance at 550nm is maximum. Then the ZnS/Ag/ZnS (ZAZ) and ZnS-SiO2/Ag/ZnS-SiO2 multilayer films were prepared by magnetron sputtering on K9 glass and PET substrates, respectively. In order to obtain better optical and electrical properties, some of samples were annealed at various temperatures. The microstructure and photoelectric properties of the samples have been carried out by glancing angle x-ray diffraction (GXRD) and focused ion beam scanning electron microscopy (FIB-SEM). Hall Effect tester and UV/Visible spectrophotometer were used to characterize the electrical and optical performances of samples. Taking into account of the conductive properties of the samples, two structures of ZAZ were prepared on K9 glass substrate, one is (43nm)/Ag (10nm)/ZnS (43nm) and the other is (43nm)/Ag (12nm)/ZnS (43nm). GXRD results show that ZnS and Ag are both amorphous. Measured results of photoelectric properties indicator that the thickness of Ag film have a great influence on the overall properties, the sample with 12nm Ag film show a better performance than the one with 10nm. The maximum transmittance of it was 83.3%, and the lowest surface resistance is 14.1Ω/sq, as a result, the figure of merit is 8.52 mΩ-1. For further improvement of the photoelectric performance of samples, ZnS-SiO2 (46nm)/Ag (11nm)/ZnS-SiO2 (46nm) multilayer films were prepared on K9 glass. The experimental results show that when the annealing temperature was 200 °C, the sample exhibited a low sheet resistance of 9.7Ω/sq and a high optical transmittance of 88.4%, and the figure of merit is 25.9 mΩ-1. A XPS test was taken to prove the diffusion of Ag particles, the results indicate that when annealed at 300 oC, the diffusion of Ag particles were accelerated. The effects of humidity and temperature on the samples were assessed by an accelerated aging test under the condition of 85oC, 85%RH for 100h. The results demonstrate the high damp heat stability of ZnS-SiO2/Ag/ZnS-SiO2 multilayer films. ZnS-SiO2/Ag/ZnS-SiO2 multilayer films exhibit good performance, in order to further expand its application, the same structure of multilayer films were prepared on PET substrate. Bending test and aging test were taken to measure its flexibility and durability respectively. The results show that the photoelectric properties of the films were influenced by the PET substrate seriously. Maximum transmittance of the sample was 71.57%, and the films exhibit a sheet resistance of 35.44 Ω/sq, the figure of merit is decreased to 0.716 mΩ-1. Aging test results show that the sample has excellent environmental stability, but the bending test showed that the transmittance of sample decreased a lot after a bend of more than 1000 times and the conductivity decreased dramatically.
语种	中文
内容类型	学位论文
源URL	[http://ir.siom.ac.cn/handle/181231/16766]
专题	上海光学精密机械研究所_学位论文
推荐引用方式 GB/T 7714	龙国云. 多层透明导电薄膜的制备与性能研究[D]. 中国科学院上海光学精密机械研究所. 2013.

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