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题名	GaN、ZnO的外延衬底材料和外延膜制备及其缺陷的研究
作者	杨卫桥
学位类别	博士
答辩日期	2003
授予单位	中国科学院上海光学精密机械研究所
导师	干福熹
关键词	氮化稼 白宝石 镓酸锂 铝酸锂 氧化锌 衬底
其他题名	Study on the growth and defects of GaN and Zno films and their substrates
中文摘要	在上世纪的最后十年的时间内，大量的探索和研究使宽禁带GaN系半导体成为20世纪末最活跃的半导体材料系。GaN系半导体材料具有许多优异的特性，它们在短波长发光二极管、激光器和紫外探测器以及高温微电子器件方面显示出了广阔的应用前景。本文围绕GaN外延膜的质量，对a-Al2O3（0001）衬底、a-Al2O3（1120）衬底、LiGaO2（001）衬底和LiAlO2（100）衬底的生长和缺陷进行了系统的分析，并对GaN薄膜的生长及缺陷进行了研究。ZnO是新近发展起来的一种半导体材料，它的特性与GaN非常相近，可以作为GaN材料系有益的补充和发展，因此本文也对它展开了初步研究。本文的主要工作及结论可概括为以下几点：1．衬底材料的生长和缺陷研究 1）用温度梯度法成功的生长出了中3英寸、高质量的白宝石单晶。并系统的分析了白宝石晶体内部的缺陷。发现位错是晶体中的主要缺陷，并有少量的小角晶界和包裹体。首次研究了白宝石晶体中的位错露头列构成的小角晶界。2）首次提出用温度梯度法生长镓酸锂晶体。并研究了提拉法生长的镓酸锂晶体的缺陷。发现LiGaO2晶体中的主要缺陷为位错，包裹体及少量小角晶界。对包裹体进行了分析研究，首次报道了LiGaO2晶体中的由于Li2O（或Li2CO3）过量而产生的包裹体。3）对提拉法生长的镓酸锂晶体的缺陷进行了研究，发现位错是γ-LiAlO2晶体中的主要缺陷，另外晶体中还有少量的包裹体和小角晶界。首次发现在γ-LiAlO2（100）面内有亚晶界结构。首次发现γ-LiAlO2晶体的（100）面和（100）面的化学腐蚀形貌有显著差别。2．在四种衬底上进行GaN外延生长的研究 1）用MOCVD法在白宝石（0001）衬底上外延生长GaN薄膜，得到了较高结晶质量的GaN外延膜。从阴极荧光形貌像中我们发现GaN薄膜是以小颗粒或柱状的形式生长而成的，薄膜中的位错密度相当高，约为107／cm2。2）国内首次在白宝石（1120）衬底上进行生长GaN外延膜的研究。质量比生长在α-Al2O3（0001）衬底上的G咖薄膜质量明显下降。α-Al2O3（1120）作为GaN的衬底材料还有待进一步研究。3）研究了用MOCVD法在稼酸铿衬底上进行GaN外延膜生长。发现LiGaO2在这种气氛中不够稳定，容易因为温度的急剧变化而开裂，从而造成衬底材料的破坏，LiGaO2衬底不适于GaN的MOCVD法外延生长。4）用MOCVD法在LiAlO2（100）上生长出了较高质量GaN（1100）外延膜。我们通过扫描电镜发现GaN在［1120］方向生长速度较快，还证实了LiAlO2衬底在MOCvD法生长条件下具有较好的稳定性，适用于GaN外延膜的MOCVD法生长。3用LP-MOCVD法成功的在白宝石（0001）衬底上生长出了ZnO（0001）外延膜，并研究了生长温度和高温热退火对ZnO外延膜质量的影响。
英文摘要	In the last ten years of the last century, great deals of studies were carried out on the wide-gap semiconductor that makes GaN the most active studied semiconductor material. GaN material has much excellent properties, GaN also has wide application foreground on the aspect of short wave LED, LD and ultra-violet detector and high temperature micro-electron device. In this paper, we surround with the quality of GaN film, studied on the growth and defects of a-Al2O3(0001) substrate, a-A12O3(1120) substrate, LiGaO2(001) substrate and LiAlO2(100) substrate systematically. We also studied on the growth and defect in GaN film. As a new semiconductor material, ZnO are like GaN in many properties, it is one kind of complement to GaN, we also studied ZnO film in this paper. The main work and results of the paper can be summarized as follows: 1. Study on the growth and defect of substrates High quality A plane sapphire crystal with 3 inch in diameter was grown by TGT, and the defects in sapphire is analyzed systematically. We found that the main defects in sapphire crystal are dislocations, there also few sub-grains and inclusions in the crystal. In the first time, we studied the dislocation array that caused by sub-grains in sapphire crystal. At the first time, we grew LiGaO2 single crystal by TGT, We also studied the defects in LiGaCh single crystal that grew by Cz., and found that the main defects are dislocations, inclusions and few sub-grains. Through the study on the inclusions, we reported at the first time that inclusions were caused by Li2O(or L12CO3) from raw material. Study on the defects of LiAlO? single crystal grew by Cz., found that the main defects were dislocations, there are also few inclusions and sub-grains. At the first time, we reported the sub-grain structure in the IJAIO2 (100) plane. And at the first time we found that the distinct difference between (100) plane and (100) plane from the chemical etch micrography image. 2. The study of growth GaN film on four different substrates GaN film were grown on a-Al2O3(0001) substrate using MOCVD, the crystalline of GaN film is quite good. By CL image, we found that GaN film was grown in granular or column structure, and the dislocation density in GaN is high, nealy 107/cm2. In China, we first report that grown GaN film on a -Al2O3(1120) substrate. The quality of GaN film is decreased comparing with that grown on a -Al2O3(0001) substrate with the same growing condition. The GaN films grown on LiGaO2(001) substrate were studied. It is found that LiGaO2 crystal is not stable enough in the condition of MOCVD, substrate is easy to craze with the acute change of temperature. Quite good quality of GaN film was grown on LiAlO2(100) substrate with MOCVD. Though SEM, we found the GaN film grow faster along [1120] orientation, we also confirmed that LiAlO2(100) substrate is quite stable in the condition of MOCVD, and LiAlO2 is suitable to the growth of GaN film using MOCVD. 3. ZnO(0001) film was grown on a -Al2O3(0001) substrate with LP-MOCVD, the effect of growing temperature and high temperature retreat to ZnO film quality was studied.
语种	中文
内容类型	学位论文
源URL	[http://ir.siom.ac.cn/handle/181231/15359]
专题	上海光学精密机械研究所_学位论文
推荐引用方式 GB/T 7714	杨卫桥. GaN、ZnO的外延衬底材料和外延膜制备及其缺陷的研究[D]. 中国科学院上海光学精密机械研究所. 2003.

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