| 题名 | 2μm波段应变量子阱激光器及外腔技术研究 |
| 作者 | 柏劲松 |
| 学位类别 | 博士 |
| 答辩日期 | 2001 |
| 授予单位 | 中国科学院上海光学精密机械研究所 |
| 导师 | 方祖捷 |
| 关键词 | 中红外波段 应变量子阱激光器 外腔半导体激光器 |
| 中文摘要 | 本论文开展了2μm波段InGaAs和锑化物应变量子阱激光器和外腔单纵模激光器的研究工作，内容包括应变量子阱激光器结构设计，制备工艺，特性测试和应用研究等几方面，以及外腔单纵模激光器的建模分析，结构设计，关键技术和整体制作等几方面。应变量子阱激光器结构设计包括材料基本参数的计算，量子阱和波导结构的设计等，其中涉及到应变能带，折射率色散关系，导带和价带子能级的计算等问题。制备工艺包括光刻，腐蚀，欧姆接触，烧结，腔面镀膜和封装等。锑化物量子阱材料具有高铝组份的限制层的特点，折射率导引结构器件制作存在易氧化，难腐蚀的技术难点。本论文重点开展了化学腐蚀工艺研究，获得较好结果。腔面镀膜对于大功率器件和外腔器件来说都是很重要的工艺，设计了实时监控装置，增透处理达到10~(-3)-10~(-4)，满足器件需求。基于应变量子阱激光合理的结构设计，优质应变量子阱材料生长和可靠的制备工艺，研制成功2μm波长InGaAs和锑化物应变量子阱激光器。1．84μm波长InGaAs室温脉冲大功率器件，峰值功率达lOOmW，脉冲运转温度最高达到325K，连续运转温度达到200K。1．98μm波长器件实现77K温区激射。2μm波段锑化物室温脉冲大功率器件，峰值功率达500mW，阈值电流密度约为500A／cm~2。台面条形结构器件77K运转。攻克2μm波段外腔单纵模半导体激光器技术。建立等效腔面模型并利用速率方程对单纵模运转机理进行了理论分析和整体设计，包括耦合效率，色散特性，腔面镀模与边模抑制比和调谐范围的关系，功率输出等的计算分析。掌握温控稳流关键技术。攻克光路调整技术难点，设计了准直激光束注入半导体激光器进行光路调整的新方法。研制成功光栅外腔和平面镜外腔两种结构的器件，其中光栅外腔结构边模抑制比达到30db，调谐范围达15nm，平面镜外腔结构边模抑制比达到lOdb。器件的电学，光学等特性的测量研究是很重要的工作，为器件设计，应用和反馈材料生长质量提供重要参考。本论文在大范围变温P-I特性和光谱特性测量方面作了较深入的工作，实验测量到InGaAs应变量子阱激光器P-I特性和光谱特性随温．度变化而表现出来的一系列异常的现象，对主要机理进行了讨论和分析。应用研究方面，将2lμm波段半导体激光器应用于中科院上海技术物理研究所HgCdTe材料均匀性测量系统和HgCdTe探测器抗辐射性能研究系统中，获得了新的技术数据。前者使均匀性测量系统的光源光谱范围从原来的0．8μm拓宽到近2．Oμm，丰富了测量数据，后者的研究包括探测器在辐射前后探测率，响应快慢和光电导衰退时间的变化测量。本论文研究工作得到了中科院九五重大项目和国家863计划新材料领域的支持，是在与中科院上海冶金研究所信息功能材料国家重点实验室的紧密合作基础之上完成的。器件研制及有关应用研究工作在本所完成，量子阱材料的分子束外延生长在上海冶金研究所完成。期望本论文的工作有助于推动国内中红外波段半导体激光材料和器件研究的发展，并有助于发展对国家环保和安全等极为重要的红外技术。 |
| 英文摘要 | The main contents of this doctoral thesis are the design, fabrication, characteristics measurement and applications of 2μm waveband InGaAs and antimonide strained quantum well laser diodes, and the technique of external cavity single longitudinal mode lasers. The design of 2μm waveband strained quantum well lasers includes the calculation of basic material parameter, the design of strained quantum well and the waveguide, related with the influence of strain on energy band, the calculation of the suband of strained quantum well, the dispersion of the refractive index and the confinement factors et al.. The fabrication technique includes the optical proceeding, etching, ohmic contact, soldering, sealed and the coated of the laser facet. The A1 component of the confinement layers of antimonide quantum well laser is so high that the chemical wet etching is very difficult to the fabrication of the refractive-guided structure. This difficulty has been overcome and the technique has been applied to the devices. The coating of the laser facets is very important for the high output power of laser diodes and the fabrication of the external cavity lasers. The anti-reflectivity film can be coated with a 10~(-3)-10~(-4) relectivity, owing to a real time monitor self-designed and maintained in the electron beam evaporator system for P-I curve measurement. Owing to the optimization of the design, the high quality of InGaAs and antimonide strained quantum well laser materials, and the mature proceeding for devices, 2μm waveband InGaAs and antimonide strained quantum well laser diodes have been fabricated successfully. The InGaAs laser diodes with 40μm-wide planar stripe are with 100mW pulsed peak optical power and a 1.82-1.84 wavelength at room temperature, a 325K of maximum pulsed operation temperature and a 200K of maximum CW operation temperature . The ridge-waveguided InGaAs laser diodes operates at 77K temperature and 1.88-1.91μm wavelength. The antimonide laser diodes with 80μm-wide planar stripe are with 500mW pulsed peak optical power and a 1.9μm of wavelength at room temperature. The antimonide laser diodes with 1.5μm-deep 20μm-wide mesa stripe operated at 77K temperature and 1.84-1.85μm wavelength. The analysis of the single longitudinal operation mechanism, the whole design and the master of key technique are important to the fabrication of 2μm waveband external cavity lasers. Based on the concept of effective cavity reflectivity and the rate equations, a simple model are given. Analysis of side mode suppression ratio, wavelength tunable range and output power, influenced by coupling efficiency, the dispersion characteristics of the grating system, the reflectivity of the laser chip facet, have been done. A new smart method for the adjustment of external cavity light way was proposed and proved to be very useful. Two kinds of external cavity lasers have been fabricated successfully. The grating external cavity laser is with a 30db of side mode suppression ratio , a 15nm of wavelength tunable range and lmW of output optical power, while the planar-mirror external cavity laser is with a 10db of side mode suppression ratio and instability. The measurement on electrical and optical characteristics of the laser diodes is a basic and important work. In this thesis, a detailed measurement on P-I curve and lasing spectrum of 2μm waveband InGaAs devices in the 77-300K temperature range has been done. Some special phenomena have been found and analyzed, which will be important to improve the quality of the materials and the performances of the devices. The 2μm waveband lasers have been applied in the measurement system for HgCdTe material uniformity, extending the spectral range from 0.8μm to 2μm and benefiting specially to the measurement of 2-3μm waveband HgCdTe material. The lasers have also been applied in the anti-radiation research of HgCdTe detectors and new data of the detective sensitivity, the responsive rate and the decay time of the optic electrical conductivity have been acquired. This thesis is an important part of the two following projects, 'Study on the midinfrared InGaAs/InGaAsP strained quantum well lasers and their physics' (Granted No.KJ706-01-06) and 'Study on III-V GaSb-based antimonide quantum well lasers and their applications' (Granted No.715-001-0142), which are supported by the 95' Key Basic Research Plan of Chinese Academy of Science and the 863 High Technical Research Project of China, respectively. The two projects are combined with the other two projects, carried out by the National Key Laboratory of Information Functional Material, Shanghai Institute of Metallurgy, Chinese Academy of Science. The 2μm waveband InGaAs and antimonide strained quantum well laser material were grown by GSMBE and MBE in this laboratory. |
| 语种 | 中文 |
| 内容类型 | 学位论文 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/15344]  |
| 专题 | 上海光学精密机械研究所_学位论文 |
| 推荐引用方式 GB/T 7714 | 柏劲松. 2μm波段应变量子阱激光器及外腔技术研究[D]. 中国科学院上海光学精密机械研究所. 2001. |
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