Light scattering to investigate the surface quality of silicon substrates | |
Zhang, Xingxin1,2; Huang, Wei1; Hu, Xiaochuan3 | |
2015 | |
会议名称 | Proceedings of SPIE - The International Society for Optical Engineering |
会议日期 | 2015 |
卷号 | 9677 |
页码 | 96769S |
中文摘要 | As a noncontact, fast, robust, high-sensitive and area-averaging technique, the light scattering containing the structural information of optical surfaces has been used to measure surface roughness for many years, and the high resolution makes it feasible to measure the surface imperfection of silicon substrates. In this paper, using the total scattering (TS) instrument at 633nm, the total scattering was measured by scanning the entire surface of silicon substrates in different surface finish levels and sizes. Then, the root-mean-square (RMS) roughness of silicon substrates was calculated according to the measured TS-values and compared to the measured results with atomic force microscope (AFM) or optical profiler, indicating the validity of the method of light scattering for estimating the RMS roughness of optical components. In addition, the silicon substrates of different surface finish levels were scanned, and the results reveal that the higher the finish level is, the larger the total scattering is. Finally, the scatter maps of silicon substrates were plotted based on the measured TS-values, and the surface defects of silicon substrates were observed and compared to the results observed with an optical microscope, indicating that the spots with larger scattering correspond to the surface defects. It can be shown from our results that measuring light scattering is an effective method to investigate the surface quality of optical components. © 2015 SPIE. |
英文摘要 | As a noncontact, fast, robust, high-sensitive and area-averaging technique, the light scattering containing the structural information of optical surfaces has been used to measure surface roughness for many years, and the high resolution makes it feasible to measure the surface imperfection of silicon substrates. In this paper, using the total scattering (TS) instrument at 633nm, the total scattering was measured by scanning the entire surface of silicon substrates in different surface finish levels and sizes. Then, the root-mean-square (RMS) roughness of silicon substrates was calculated according to the measured TS-values and compared to the measured results with atomic force microscope (AFM) or optical profiler, indicating the validity of the method of light scattering for estimating the RMS roughness of optical components. In addition, the silicon substrates of different surface finish levels were scanned, and the results reveal that the higher the finish level is, the larger the total scattering is. Finally, the scatter maps of silicon substrates were plotted based on the measured TS-values, and the surface defects of silicon substrates were observed and compared to the results observed with an optical microscope, indicating that the spots with larger scattering correspond to the surface defects. It can be shown from our results that measuring light scattering is an effective method to investigate the surface quality of optical components. © 2015 SPIE. |
收录类别 | SCI ; EI |
学科主题 | Atomic force microscopy - Finishing - Light - Light scattering - Lithography - Optical testing - Silicon - Substrates - Surface defects - Surface properties - Surface roughness |
语种 | 英语 |
ISSN号 | 0277-786X |
内容类型 | 会议论文 |
源URL | [http://ir.ioe.ac.cn/handle/181551/7864] |
专题 | 光电技术研究所_薄膜光学技术研究室(十一室) |
作者单位 | 1.Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China 2.Graduate School of the Chinese Academy of Sciences, Beijing, China 3.College of Electronic Information, Sichuan University, Chengdu, China |
推荐引用方式 GB/T 7714 | Zhang, Xingxin,Huang, Wei,Hu, Xiaochuan. Light scattering to investigate the surface quality of silicon substrates[C]. 见:Proceedings of SPIE - The International Society for Optical Engineering. 2015. |
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