Quantized transport of interface and edge states in bent graphene

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	Quantized transport of interface and edge states in bent graphene
	Li, CC; Xu, L; Zhang, J
刊名	SOLID STATE COMMUNICATIONS
	2015
卷号	207 期号:0 页码:30-34
关键词	Bent graphene Interface state Quantum Hall effect
通讯作者	Zhang, J (reprint author), Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China.
英文摘要	We explore the transport behavior of interface and edge states in bent graphene under a magnetic field. The bending angle can change the distribution of interface and edge states, resulting in an interesting evolution of quantized conductance. The interface state vanishes when the bending angle is not less than pi/2, whereas the edge state remains. In the presence of Zeeman splitting, the transport properties are also considered and a quantum spin Hall effect is found. These results may provide a way to control the interlace Current. (C) 2015 Published by Elsevier Ltd.
学科主题	Physics
类目[WOS]	Physics, Condensed Matter
关键词[WOS]	HGTE QUANTUM-WELLS ; ELECTRONIC TRANSPORT ; CARBON NANOTUBES ; SPIN
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.itp.ac.cn/handle/311006/21043]
专题	理论物理研究所_理论物理所1978-2010年知识产出
推荐引用方式 GB/T 7714	Li, CC,Xu, L,Zhang, J. Quantized transport of interface and edge states in bent graphene[J]. SOLID STATE COMMUNICATIONS,2015,207(0):30-34.
APA	Li, CC,Xu, L,&Zhang, J.(2015).Quantized transport of interface and edge states in bent graphene.SOLID STATE COMMUNICATIONS,207(0),30-34.
MLA	Li, CC,et al."Quantized transport of interface and edge states in bent graphene".SOLID STATE COMMUNICATIONS 207.0(2015):30-34.