Gap-optimized Moiré phase imaging alignment for proximity lithography

CORC > 光电技术研究所 > 中国科学院光电技术研究所 > 微电子装备总体研究室（四室）

	Gap-optimized Moiré phase imaging alignment for proximity lithography
	Zhu, Jiangping 1; Hu, Song 2; You, Zhisheng 1; Su, Xianyu 3
刊名	Optical Engineering
	2015
卷号	54 期号:1 页码:17105
ISSN号	0091-3286
通讯作者	You, Zhisheng
中文摘要	The proposed four-quadrant Moiré alignment scheme to detect the misalignment between mask and wafer for proximity lithography can achieve the alignment accuracy with nanometer level. When implementing the scheme, however, the distribution of Moiré fringes associated with the mask-wafer gap indeed goes against the alignment, making the gap optimization highly urgent. The optimization model is established, and numerical simulation as well as experimental verification is also provided. Furthermore, an alignment accuracy of ∼3 nm with the illumination wavelength of 632.8 nm is experimentally attained. Simultaneously, the design mechanism of alignment marks for improving the availability of the alignment scheme is discussed. © Society of Photo-Optical Instrumentation Engineers.
英文摘要	The proposed four-quadrant Moiré alignment scheme to detect the misalignment between mask and wafer for proximity lithography can achieve the alignment accuracy with nanometer level. When implementing the scheme, however, the distribution of Moiré fringes associated with the mask-wafer gap indeed goes against the alignment, making the gap optimization highly urgent. The optimization model is established, and numerical simulation as well as experimental verification is also provided. Furthermore, an alignment accuracy of ∼3 nm with the illumination wavelength of 632.8 nm is experimentally attained. Simultaneously, the design mechanism of alignment marks for improving the availability of the alignment scheme is discussed. © Society of Photo-Optical Instrumentation Engineers.
学科主题	Lithography - Optimization
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000349442900047
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/7328]
专题	光电技术研究所_微电子装备总体研究室（四室）
作者单位	1.Sichuan University, School of Computer Science and Technology, Chengdu, China 2.Chinese Academy of Sciences, State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chengdu, China 3.Sichuan University, School of Electronics and Information, Chengdu, China
推荐引用方式 GB/T 7714	Zhu, Jiangping,Hu, Song,You, Zhisheng,et al. Gap-optimized Moiré phase imaging alignment for proximity lithography[J]. Optical Engineering,2015,54(1):17105.
APA	Zhu, Jiangping,Hu, Song,You, Zhisheng,&Su, Xianyu.(2015).Gap-optimized Moiré phase imaging alignment for proximity lithography.Optical Engineering,54(1),17105.
MLA	Zhu, Jiangping,et al."Gap-optimized Moiré phase imaging alignment for proximity lithography".Optical Engineering 54.1(2015):17105.