Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation

CORC > 光电技术研究所 > 中国科学院光电技术研究所 > 薄膜光学技术研究室（十一室）

	Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation
	Wang, Qian 1,2; Li, Bincheng 1; Ren, Shengdong 1,2; Wang, Qiang 1
刊名	International Journal of Thermophysics
	2015
卷号	36 期号:5-6 页码:1173-1180
ISSN号	0195-928X
通讯作者	Li, Bincheng
中文摘要	The activation and recrystallization in arsenic ion-implanted silicon under excimer laser (193 nm) irradiation is investigated using photocarrier radiometry (PCR). Arsenic ion-implanted silicon wafers with a dose of 1×1015 cm-2 and an energy of 1 keV were irradiated at different laser parameters, such as the laser fluence, shot number, and repetition rate. The excimer laser irradiation-induced enhancement of PCR signals of implanted silicon samples showed that the implantation-induced crystalline structural damage was reduced and the implanted ions were effectively activated. © 2014, Springer Science+Business Media New York.
英文摘要	The activation and recrystallization in arsenic ion-implanted silicon under excimer laser (193 nm) irradiation is investigated using photocarrier radiometry (PCR). Arsenic ion-implanted silicon wafers with a dose of 1×1015 cm-2 and an energy of 1 keV were irradiated at different laser parameters, such as the laser fluence, shot number, and repetition rate. The excimer laser irradiation-induced enhancement of PCR signals of implanted silicon samples showed that the implantation-induced crystalline structural damage was reduced and the implanted ions were effectively activated. © 2014, Springer Science+Business Media New York.
学科主题	Arsenic - Excimer lasers - Ion implantation - Ions - Irradiation - Laser beam effects - Photoelectricity - Radiometry - Silicon
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000356611100050
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/6643]
专题	光电技术研究所_薄膜光学技术研究室（十一室）
作者单位	1.Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu 2.Sichuan, China 3.University of the Chinese Academy of Sciences, Beijing, China
推荐引用方式 GB/T 7714	Wang, Qian,Li, Bincheng,Ren, Shengdong,et al. Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation[J]. International Journal of Thermophysics,2015,36(5-6):1173-1180.
APA	Wang, Qian,Li, Bincheng,Ren, Shengdong,&Wang, Qiang.(2015).Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation.International Journal of Thermophysics,36(5-6),1173-1180.
MLA	Wang, Qian,et al."Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation".International Journal of Thermophysics 36.5-6(2015):1173-1180.