Influences of Si spacer layers on the structures of Ge/Si quantum dot bilayers

	Influences of Si spacer layers on the structures of Ge/Si quantum dot bilayers
	Jiang XM(姜晓明); Jiang, X; Metzger, TH; Sztucki, M; Jiang, Z; Jiang, W; Xian, D; Xian DC(冼鼎昌)
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2003
卷号	200 页码:40-45
关键词	Ge quantum dots microstructure X-ray diffraction
通讯作者	Beijing Synchrotron Radiat Lab, Beijing 100039, Peoples R China ; European Synchrotron Radiat Facil, F-38043 Grenoble, France ; Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China
英文摘要	The influences of the Si caplayer or spacer layer on the microstructures of the Ge/Si(0 0 1) quantum dots (underneath or on the top of the Si thin layer) are studied by synchrotron radiation X-ray techniques (reflection, diffraction and grazing incident diffraction (GID)) and atomic force microscope (AFM). It is found that the Ge composition varies with the dot size in the freestanding Ge dots sample with a bi-modal size distribution. When a Si caplayer is deposited on the Ge dots, the Ge quantum dots are laterally compressed by the surrounding Si lattice. The strain of the Ge dots spreads into the caplayer and reaches to the surface even if the caplayer is as thick as 70 nm. It is confirmed that this residual strain induced by the buried Ge dots improves the size uniformity of Ge dots grown on the Si caplayer (or spacer layer) surface, so that a uniform size distribution of the Ge dots is observed by AFM and the corresponding strain is measured by GID. However, for a Si caplayer with a thickness larger than 90 nm, no residual strain from the buried quantum dots was observed near the sample's surface. In this case, the dots grown on the surface show the same features as that grown on a Si substrate wafer (i.e. bi-modal size distribution), so that no strain-mediated influence of the buried dots takes place. (C) 2002 Elsevier Science B.V. All rights reserved.
学科主题	Instruments & Instrumentation; Nuclear Science & Technology; Physics
类目[WOS]	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Atomic, Molecular & Chemical ; Physics, Nuclear
研究领域[WOS]	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000180998600007
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/236803]
专题	高能物理研究所_院士
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Jiang XM,Jiang, X,Metzger, TH,et al. Influences of Si spacer layers on the structures of Ge/Si quantum dot bilayers[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2003,200:40-45.
APA	姜晓明.,Jiang, X.,Metzger, TH.,Sztucki, M.,Jiang, Z.,...&冼鼎昌.(2003).Influences of Si spacer layers on the structures of Ge/Si quantum dot bilayers.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,200,40-45.
MLA	姜晓明,et al."Influences of Si spacer layers on the structures of Ge/Si quantum dot bilayers".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 200(2003):40-45.