Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects

	Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects
	Yang, XL; Zhu, WX; Wang, CD; Fang, H; Yu, TJ; Yang, ZJ; Zhang, GY; Qin, XB; Yu, RS; Wang, BY
刊名	APPLIED PHYSICS LETTERS
	2009
卷号	94 期号:15 页码:151907
关键词	doping profiles Doppler broadening ferromagnetic materials gallium compounds III-V semiconductors magnetic thin films manganese compounds MOCVD positron annihilation semiconductor doping semiconductor thin films semimagnetic semiconductors vacancies (crystal) wide band gap semiconductors
通讯作者	[Yang, X. L. ; Zhu, W. X. ; Wang, C. D. ; Fang, H. ; Yu, T. J. ; Yang, Z. J. ; Zhang, G. Y.] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China ; [Qin, X. B. ; Yu, R. S. ; Wang, B. Y.] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China
英文摘要	The vacancy-type defects in (Ga,Mn)N films grown by metal organic chemical vapor deposition were studied by positron annihilation technique. Doppler broadening spectra were measured for the films. Compared to the undoped GaN film, the positron trapping defects in the (Ga,Mn)N films have been changed to a new type defects and its concentration increases with the increasing Mn concentration. By analyzing the S-W correlation plots and our previous results, we identify this type defects in the (Ga,Mn)N as V(N)-Mn(Ga) complex. This type of defects should be considered when understand the magnetic properties in a real (Ga,Mn)N system.
学科主题	Physics
类目[WOS]	Physics, Applied
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000265285200024
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/241007]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Yang, XL,Zhu, WX,Wang, CD,et al. Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects[J]. APPLIED PHYSICS LETTERS,2009,94(15):151907.
APA	Yang, XL.,Zhu, WX.,Wang, CD.,Fang, H.,Yu, TJ.,...&王宝义.(2009).Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects.APPLIED PHYSICS LETTERS,94(15),151907.
MLA	Yang, XL,et al."Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects".APPLIED PHYSICS LETTERS 94.15(2009):151907.