Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate

	Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate
	Yin, ZG; Chen, NF; Li, Y; Zhang, XW; Bai, YM; Chai, CL; Xie, YN; Zhang, J; Xie YN(谢亚宁); Zhang J(张静)
刊名	APPLIED PHYSICS LETTERS
	2008
卷号	93 期号:14 页码:142109
通讯作者	[Yin, Z. G. ; Chen, N. F. ; Zhang, X. W. ; Bai, Y. M. ; Chai, C. L.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China ; [Li, Y.] Univ Puerto Rico, Dept Engn Sci & Mat, Mayaguez, PR 00681 USA ; [Xie, Y. N. ; Zhang, J.] Chinese Acad Sci, Inst High Energy Phys, Lab Synchrotron Radiat, Beijing 100039, Peoples R China
英文摘要	We have investigated the magnetic properties of Co-doped zinc oxide (ZnO) film deposited on silicon substrate by magnetron sputtering. Co ions have a valence of 2+ and substitute for Zn sites in the lattice. By using a chemical etching method, an extrinsic ferromagnetism was demonstrated. The observed ferromagnetism is neither associated with magnetic precipitates nor with contamination, but originates from the silicon/silicon oxide interface. This interface ferromagnetism is characterized by being temperature independent and by having a parallel magnetic anisotropy. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2989128]
学科主题	Physics
类目[WOS]	Physics, Applied
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000259965400026
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/241000]
专题	高能物理研究所_多学科研究中心高能物理研究所_实验物理中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Yin, ZG,Chen, NF,Li, Y,et al. Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate[J]. APPLIED PHYSICS LETTERS,2008,93(14):142109.
APA	Yin, ZG.,Chen, NF.,Li, Y.,Zhang, XW.,Bai, YM.,...&张静.(2008).Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate.APPLIED PHYSICS LETTERS,93(14),142109.
MLA	Yin, ZG,et al."Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate".APPLIED PHYSICS LETTERS 93.14(2008):142109.