Correlation between donor defects and ferromagnetism in insulating Sn1-xCoxO2 films

	Correlation between donor defects and ferromagnetism in insulating Sn1-xCoxO2 films
	Liu, XF; Iqbal, J; Gong, WM; Yang, SL; Gao, RS; Zeng, F; Yu, RH; He, B; Hao, YP; Hao, XP
刊名	JOURNAL OF APPLIED PHYSICS
	2009
卷号	105 期号:9 页码:93931
通讯作者	[Liu, X. F. ; Iqbal, Javed ; Gong, W. M. ; Yang, S. L. ; Gao, R. S. ; Zeng, F. ; Yu, R. H.] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China ; [He, B.] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China ; [Hao, Y. P.] Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Peoples R China ; [Hao, X. P.] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China
英文摘要	Sn1-xCoxO2 films have been fabricated to study the local structure of Co dopant and the mediation effects of donor defects (oxygen vacancies and Sn interstitials) on magnetic properties. Compared to as-grown film, the ferromagnetism is evidently enhanced after annealing in vacuum at 400 C due to the increase in oxygen vacancies. While annealing at higher temperature, the ferromagnetism declines because of the domination of decrease in Sn interstitials over increase in oxygen vacancies in the films. The incorporation of Co dopant as well as the presence of oxygen vacancies and Sn interstitials is verified using x-ray absorption fine structure spectroscopy. The variations in the concentration of defects as a function of annealing temperature are obtained by positron annihilation spectroscopy technique. Additionally, the changes in structure and ferromagnetism after annealing in different atmospheres further demonstrate the crucial roles of oxygen vacancies and Sn interstitials in tuning ferromagnetism. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3125325]
学科主题	Physics
类目[WOS]	Physics, Applied
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000266263300119
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/240853]
专题	高能物理研究所_多学科研究中心高能物理研究所_实验物理中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Liu, XF,Iqbal, J,Gong, WM,et al. Correlation between donor defects and ferromagnetism in insulating Sn1-xCoxO2 films[J]. JOURNAL OF APPLIED PHYSICS,2009,105(9):93931.
APA	Liu, XF.,Iqbal, J.,Gong, WM.,Yang, SL.,Gao, RS.,...&郝小鹏.(2009).Correlation between donor defects and ferromagnetism in insulating Sn1-xCoxO2 films.JOURNAL OF APPLIED PHYSICS,105(9),93931.
MLA	Liu, XF,et al."Correlation between donor defects and ferromagnetism in insulating Sn1-xCoxO2 films".JOURNAL OF APPLIED PHYSICS 105.9(2009):93931.