Influence of ultrathin amorphous silicon layers on the nucleation of microcrystalline silicon films under hydrogen plasma treatment
Zuo, ZW; Guan, WT; Wang, Y; Lu, J; Wang, JZ; Pu, L; Shi, Y; Zheng, YD; Luo, XY; Wang, HH
刊名APPLIED PHYSICS LETTERS
2011
卷号98期号:4页码:41902
通讯作者[Zuo, Z. W. ; Guan, W. T. ; Wang, Y. ; Lu, J. ; Wang, J. Z. ; Pu, L. ; Shi, Y. ; Zheng, Y. D.] Nanjing Univ, Sch Elect Sci & Engn, Key Lab Photon & Elect Mat, Nanjing 210093, Peoples R China ; [Luo, X. Y. ; Wang, H. H.] Inst High Energy Phys, Beijing Synchrotron Radiat Lab, Beijing 100049, Peoples R China
英文摘要Microstructures of phosphorus-doped hydrogenated microcrystalline silicon (mu c-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition are certainly dependent on the thickness of the H-2 plasma-treated amorphous silicon (a-Si:H) layers. An ultrathin H-treated a-Si:H layer is beneficial in obtaining a very thin mu c-Si:H film with high conductivity. Experimental results indicate that H-2 plasma treatment induces the occurrence of high-pressure H-2 in microvoids and causes compressive stress inside the ultrathin a-Si:H layers, thereby enhancing the generation of strained Si-Si bonds and nucleation sites and consequently accelerating the nucleation of mu c-Si:H films. (c) 2011 American Institute of Physics. [doi:10.1063/1.3548674]
学科主题Physics
类目[WOS]Physics, Applied
研究领域[WOS]Physics
原文出处SCI
语种英语
WOS记录号WOS:000286676600009
内容类型期刊论文
源URL[http://ir.ihep.ac.cn/handle/311005/240601]  
专题高能物理研究所_多学科研究中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Zuo, ZW,Guan, WT,Wang, Y,et al. Influence of ultrathin amorphous silicon layers on the nucleation of microcrystalline silicon films under hydrogen plasma treatment[J]. APPLIED PHYSICS LETTERS,2011,98(4):41902.
APA Zuo, ZW.,Guan, WT.,Wang, Y.,Lu, J.,Wang, JZ.,...&王焕华.(2011).Influence of ultrathin amorphous silicon layers on the nucleation of microcrystalline silicon films under hydrogen plasma treatment.APPLIED PHYSICS LETTERS,98(4),41902.
MLA Zuo, ZW,et al."Influence of ultrathin amorphous silicon layers on the nucleation of microcrystalline silicon films under hydrogen plasma treatment".APPLIED PHYSICS LETTERS 98.4(2011):41902.
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