Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition

	Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition
	Xu, DP; Wang, YT; Yang, H; Li, SF; Zhao, DG; Fu, Y; Zhang, SM; Wu, RH; Jia, QJ; Zheng, WL
刊名	JOURNAL OF APPLIED PHYSICS
	2000
卷号	88 期号:6 页码:3762-3764
通讯作者	Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 100083, Peoples R China
英文摘要	Strains in cubic GaN films grown on GaAs (001) were measured by a triple-axis x-ray diffraction method. Residual strains in the as-grown epitaxial films were in compression, contrary to the predicted tensile strains caused by large lattice mismatch between epilayers and GaAs substrates (20%). It was also found that the relief of strains in the GaN films has a complicated dependence on the growth conditions. We interpreted this as the interaction between the lattice mismatch and thermal mismatch stresses. The fully relaxed lattice constants of cubic GaN are determined to be 4.5038 +/- 0.0009 Angstrom, which is in excellent agreement with the theoretical prediction of 4.503 Angstrom. (C) 2000 American Institute of Physics. [S0021-8979(00)07918-4].
学科主题	Physics
类目[WOS]	Physics, Applied
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000089034700095
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/239936]
专题	高能物理研究所_多学科研究中心高能物理研究所_实验物理中心中国科学院高能物理研究所_人力资源处
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Xu, DP,Wang, YT,Yang, H,et al. Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition[J]. JOURNAL OF APPLIED PHYSICS,2000,88(6):3762-3764.
APA	Xu, DP.,Wang, YT.,Yang, H.,Li, SF.,Zhao, DG.,...&姜晓明.(2000).Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition.JOURNAL OF APPLIED PHYSICS,88(6),3762-3764.
MLA	Xu, DP,et al."Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition".JOURNAL OF APPLIED PHYSICS 88.6(2000):3762-3764.