Upgrading design of the 3BILA beamline for x-ray nanometre lithography of microelectronic devices at BSRF

	Upgrading design of the 3BILA beamline for x-ray nanometre lithography of microelectronic devices at BSRF
	Yi FT(伊福廷); Peng LQ(彭良强); Zhang JF(张菊芳); Han Y(韩勇); Yi, FT; Ye, TC; Peng, LQ; Chen, DP; Zhang, JF; Han, Y
刊名	CHINESE PHYSICS
	2004
卷号	13 期号:5 页码:731-736
关键词	synchrotron radiation x-ray x-ray lithography synchrotron radiation beamline
通讯作者	Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China ; Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
英文摘要	Beijing Synchrotron Radiation Facility is a partly dedicated synchrotron radiation source operated in either parasitic or dedicated mode. The 3B1A beamline, extracted from a bending magnet, was originally designed as a soft x-ray beamline for submicro x-ray lithography with critical lateral size just below 1mum in 1988 and no change has been made since it was built. But later the required resolution of x-ray lithography has changed from sub-micrometre to the nanometre in the critical lateral size. This beamline can longer more meet the requirement for x-ray nano lithography and has to be modified to fit the purpose. To upgrade the design of the 3B1A beamline for x-ray nano lithography, a mirror is used to reflect and scan the x-ray beam for the nano lithography station, but the mirror's grazing angle is changed to 27.9mrad in the vertical direction, and the convex curve needs to be modified to fit the change; the tiny change of mirror scanning angle is firstly considered to improve the uniformity of the x-ray spot on the wafer by controlling the convex curve.
学科主题	Physics
类目[WOS]	Physics, Multidisciplinary
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000221271600027
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/238377]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Yi FT,Peng LQ,Zhang JF,et al. Upgrading design of the 3BILA beamline for x-ray nanometre lithography of microelectronic devices at BSRF[J]. CHINESE PHYSICS,2004,13(5):731-736.
APA	伊福廷.,彭良强.,张菊芳.,韩勇.,Yi, FT.,...&Han, Y.(2004).Upgrading design of the 3BILA beamline for x-ray nanometre lithography of microelectronic devices at BSRF.CHINESE PHYSICS,13(5),731-736.
MLA	伊福廷,et al."Upgrading design of the 3BILA beamline for x-ray nanometre lithography of microelectronic devices at BSRF".CHINESE PHYSICS 13.5(2004):731-736.